Analysis of photographic emulsions for High-Voltage Electron Microscopy

1993 ◽  
Vol 51 ◽  
pp. 452-453 ◽  
Author(s):  
James R. Kremer ◽  
Paul S. Furcinitti ◽  
Eileen O’Toole ◽  
J. Richard McIntosh
Keyword(s):  
Electron Microscope ◽  
Optical Density ◽  
High Voltage ◽  
Noise Power ◽  
Limited Information ◽  
Modulation Transfer ◽  
Transmission Microscopy ◽  
High Voltage Electron Microscopy ◽  
Voltage Range ◽  
Voltage Electron

Characteristics of electron microscope film emulsions, such as the speed, the modulation transfer function, and the exposure dependence of the noise power spectrum, have been studied for electron energies (80-100keV) used in conventional transmission microscopy. However, limited information is available for electron energies in the intermediate to high voltage range, 300-1000keV. Furthermore, emulsion characteristics, such as optical density versus exposure, for new or improved emulsions are usually only quoted by film manufacturers for 80keV electrons. The need for further film emulsion studies at higher voltages becomes apparent when searching for a film to record low dose images of radiation sensitive biological specimens in the frozen hydrated state. Here, we report the optical density, speed and relative resolution of a few of the more popular electron microscope films after exposure to 1MeV electrons.Three electron microscope films, Kodak S0-163, Kodak 4489, and Agfa Scientia 23D56 were tested with a JEOLJEM-1000 electron microscope operating at an accelerating voltage of 1000keV.

The Network Parameters Of The T-System In Frog Muscle Measured With The High Voltage Electron Microscope.

1975 ◽  
Vol 33 ◽  
pp. 550-551 ◽  
Author(s):  
Brenda R. Eisenberg ◽  
Lee D. Peachey
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Voltage ◽  
Sartorius Muscle ◽  
High Voltage Electron Microscopy ◽  
Network Parameters ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
T System

Analysis of the electrical properties of the t-system requires knowledge of the geometry of the t-system network. It is now possible to determine the network parameters experimentally by use of high voltage electron microscopy. The t-system was marked with exogenous peroxidase. Conventional methods of electron microscopy were used to fix and embed the sartorius muscle from four frogs. Transverse slices 0.5-1.0 μm thick were viewed at an accelerating voltage of 1000 kV using the JEM-1000 high voltage electron microscope at Boulder, Colorado and prints at x5000 were used for analysis.The length of a t-branch (t) from node to node (Fig. 1a) was measured with a magnifier; at least 150 t-branches around 30 myofibrils were measured from each frog. The mean length of t is 0.90 ± 0.11 μm and the number of branches per myofibril is 5.4 ± 0.2 (mean ± SD, n = 4 frogs).

High Voltage Electron Microscopy of Integrated Circuit Devices

1972 ◽  
Vol 30 ◽  
pp. 486-487
Author(s):  
P. J. Smith ◽  
H. A. Troutman ◽  
R. K. Raheja
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Integrated Circuit ◽  
Complete Characterization ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Microscopy ◽  
Entire Area ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron

One-MEV transmission electron microscopy has been used to examine the complete structure of individual integrated circuit devices. The use of high voltage microscopy provided sufficient penetration to examine the entire emitter and base regions, while a new specimen preparation technique ensured that the device was uniformly thinned.As previously reported, a TEM specimen preparation technique has been developed which uses the structure of the device itself to form the thinned sample. This technique has been used to prepare samples which are uniformly thin over the entire area of the device. Thus the complete characterization of the defect structure within the device is possible; this is necessary if a direct relationship between structure and electrical properties is to be made. Samples approximately 3 μ m thick were prepared so that the complete emitter and base regions and part of the collector could be examined by high voltage transmission microscopy. The emitter-base and collector-base junctions were 1.7 μ m and 2.1 μ m deep respectively. The base dopant was boron and the emitter dopant was phosphorous.

scholarly journals Direct Observation of Radiation Induced Precipitation in High Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 266-267
Author(s):  
Wei-Kuo Wu ◽  
Jack Washburn
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Two Samples ◽  
Radiation Induced ◽  
Long Rod ◽  
Ion Implanted

Long needle-shaped radiation induced precipitates oriented along <110> directions were first reported by Nes and Washburn from observation using hot stage high voltage electron microscopy. Similar long rod-like defects have also been observed in boron ion implanted silicon.Our recent results show that most long rod-like defects formed during postimplantation annealing of boron ion implanted silicon are boron precipitates. The cause for the formation of these long rod-like defects is assumed to be replacement of substitutional boron by silicon selfinterstitials.To substantiate this mechanism two samples were irradiated in the high voltage electron microscope. Sample A was a boron doped <111> oriented silicon of resistivity 0.75 Ω-cm (2.5x10l6 B/cm3) and sample B was phosphorous doped, of resistivity 2 Ω-cm (2.7x10l5 p/cm3).Figure 1 shows the sequential development of long rod-like defects in sample A held at 620°C during irradiation with 650 keV electrons.

High-voltage electron microscopy of unsectioned human lung alveolar walls

1986 ◽  
Vol 44 ◽  
pp. 224-225
Author(s):  
Jacob Bastacky
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Human Lung ◽  
Freeze Fracture ◽  
High Voltage Electron Microscopy ◽  
Composite Image ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Transmission Electron ◽  
Surface Image

The lung presents a very thin tissue barrier (0.2 μm) to gas exchange with alveolar walls on the order of 10 ym thick. We found the highly energetic (1.5 MeV) beam of the high voltage electron microscope (HVEM) able to penetrate whoiemount unsectioned alveolar walls. Thus, it is possible to simultaneously image the two surfaces of the wall and the internal contents of the wall. The result resembles a high-resolution scanning electron microscope (SEM) surface image with a superimposed transmission electron microscope (TEM) image of internal structure. The composite image resembles a freeze fracture image; however, this technique has the advantage that the specimen is still present.

Whole Mount Observation of Cultured Cells

1980 ◽  
Vol 38 ◽  
pp. 802-805 ◽  
Author(s):  
K. Hama
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Image Quality ◽  
High Voltage ◽  
Cultured Cells ◽  
Specimen Thickness ◽  
High Voltage Electron Microscopy ◽  
Cellular Architecture ◽  
Voltage Electron ◽  
Whole Mount

The cellular architecture of cultured cells has been investigated on critical-point dried whole mount preparations with the aid of stereo-high voltage electron microscopy2,4,5. In these preparations, the absence of an embedding material permits an stereoobservation at rather low accelerating voltage1,3. In the present study, whole mount preparations of cultured chick fibroblasts were examined in the electron microscope operated at 100 KV, 200 KV, 500 KV, 750 KV and 1,000 KV to investigate the voltage dependency of the usable specimen thickness and of the image quality at different specimen thickness.

High Voltage Electron Microscopy in Biology

1970 ◽  
Vol 28 ◽  
pp. 12-13
Author(s):  
Hans Ris
Keyword(s):  
Electron Microscopy ◽  
Heavy Metal ◽  
Electron Microscope ◽  
High Voltage ◽  
Cell Structure ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Sectioning Method ◽  
High Voltage Electron ◽  
Electron Microscopes

Conventional electron microscopes operate with accelerating voltages up to 100kV. Because of the scattering of electrons by atoms of the specimen an image with reasonable resolution can only be obtained with very thin specimens. The study of cell structure with the electron microscope became possible only with the introduction of ultramicrotomes which produce sections of plastic-embedded tissues down to about 100A in thickness. It has long been known that useful images could be obtained with much thicker materials at higher accelerating voltages (cf. refs. 1 and 2) and in the early sixties electron microscopes operating at voltages of up to one million Volts were built in Japan and in France. Their capabilities were soon demonstrated in metallurgy but they were ignored until recently by biologists. For one, biologists were busy exploiting the sectioning method and in addition may have been deterred by the knowledge that scattering contrast rapidly decreases at higher accelerating voltage. Only recently has it been realized that excellent contrast is obtained at 500 and 1000kV with the usual heavy metal stains (3,4). High voltage microscopes are now manufactured commercially in England (AEI), France (GESPA) and Japan (Hitachi, Jeol) and should soon be more widely accessible.

Integrated microscopy resource for biomedical research at the university of wisconsin at madison

1987 ◽  
Vol 45 ◽  
pp. 594-597 ◽  
Author(s):  
G. Schatten ◽  
J. Pawley ◽  
H. Ris
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Voltage ◽  
Biomedical Research ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
University Of Wisconsin ◽  
Transmission Electron ◽  
The University

The High Voltage Electron Microscopy Laboratory [HVEM] at the University of Wisconsin-Madison, a National Institutes of Health Biomedical Research Technology Resource, has recently been renamed the Integrated Microscopy Resource for Biomedical Research [IMR]. This change is designed to highlight both our increasing abilities to provide sophisticated microscopes for biomedical investigators, and the expansion of our mission beyond furnishing access to a million-volt transmission electron microscope. This abstract will describe the current status of the IMR, some preliminary results, our upcoming plans, and the current procedures for applying for microscope time.The IMR has five principal facilities: 1.High Voltage Electron Microscopy2.Computer-Based Motion Analysis3.Low Voltage High-Resolution Scanning Electron Microscopy4.Tandem Scanning Reflected Light Microscopy5.Computer-Enhanced Video MicroscopyThe IMR houses an AEI-EM7 one million-volt transmission electron microscope.

Correlative confocal light microscopy and high-voltage electron microscopy of neurons

1992 ◽  
Vol 50 (1) ◽  
pp. 564-565
Author(s):  
J.N. Turner ◽  
D.H. Szarowski ◽  
D. Decker ◽  
K.L. Smith ◽  
M. Fejtl ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Light Microscope ◽  
Brain Slices ◽  
Ultrastructural Level ◽  
Three Dimensions ◽  
Electron Microscopic ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron

Neurons are cells with extensive dendritic and axonal arborizations extending from the cell body hundreds of micrometers or more in all three-dimensions. These structures have specializations, such as dendritic spines, that are at or just below the level of resolution of the light microscope (LM), and others, such as synapses, that can be resolved only in the electron microscope. Thus, it can be essential to correlate light and electron microscopic images from the same specimen. Due to its discrimination along the z-dimension (optic axis), the confocal light microscope is ideal for investigating neurons and correlating their structure and function. At the ultrastructural level, we use the high-voltage electron microscope (HVEM) to collect three-dimensional data, because it images thick objects. We are studying neurons in culture, and in thick acute and long term cultured brain slices. LM observations are made either after fixation or live by LM, and these images are correlated with HVEM ultrastructural observations.

A Method for Observing Silver-Stained Osteocytes In Situ in 3-μm Sections Using Ultra-High Voltage Electron Microscopy Tomography

2009 ◽  
Vol 15 (5) ◽  
pp. 377-383 ◽  
Author(s):  
Hiroshi Kamioka ◽  
Sakhr A. Murshid ◽  
Yoshihito Ishihara ◽  
Naoko Kajimura ◽  
Toshiaki Hasegawa ◽  
...  
Keyword(s):  
Electron Microscope ◽  
High Voltage ◽  
Morphological Data ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Specimen Holder ◽  
High Voltage Electron ◽  
Tilt Series ◽  
Ultra High Voltage

AbstractOsteocytes are surrounded by hard bone matrix, and it has not been possible previously to directly observe the in situ architecture of osteocyte morphology in bone. Electron microscope tomography, however, is a technique that has the unique potential to provide three-dimensional (3D) visualization of cellular ultrastructure. This approach is based on reconstruction of 3D volumes from a tilt series of electron micrographs of cells, and resolution at the nanometer level has been achieved. We applied electron microscope tomography to thick sections of silver-stained osteocytes in bone using a Hitachi H-3000 ultra-high voltage electron microscope equipped with a 360° tilt specimen holder, at an accelerating voltage of 2 MeV. Osteocytes with numerous processes and branches were clearly seen in the serial tilt series acquired from 3-μm-thick sections. Reconstruction of young osteocytes showed the 3D topographic morphology of the cell body and processes at high resolution. This morphological data on osteocytes should provide useful information to those who study osteocyte physiology and the several models used to explain their mechanosensory properties.

scholarly journals High Voltage Electron Microscopy at Berkeley

1970 ◽  
Vol 28 ◽  
pp. 2-3
Author(s):  
G. Thomas
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Voltage ◽  
Research Program ◽  
Transmission Power ◽  
Preparation Methods ◽  
High Voltage Electron Microscopy ◽  
High Energies ◽  
Voltage Electron ◽  
Thin Foils

A Hitachi 650kV electron microscope was installed at Berkeley in May 1969. (fig. 1) The fourier resolution test showed 4A° (fig. 2). The research program is centered around three principal advantages which open up new areas of microscopic analyses. These advantages are: a) the gain in transmission power with increasing voltage enabling thick specimens to be examined (up to about 6μ at 650kV depending on material) b) increased stability of roganic solids to radiation damage c) the disappearance voltage effect and fundamental advantages arising from many beam contrast phenomena at high energies.The increase in transmission enables materials to be examined for which preparation of thin foils is difficult. It also enables specimens to be examined in some cases without any preparation. In the study of fossils it is particularly important to minimize preparation methods since material which has been imbedded in rocks for millions of years are usually brittle and difficult to section. Fig. 3 shows an example of the fibious structure of part of a graptolite specimen, which is 4 × 108 years old. Another example is a study of damage in as-received lunar surface particles (fig. 4).

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