Characterization of poly-Silicon emitter BJTs as access devices for Phase Change Memory

2009 ◽  
Author(s):  
B. Rajendran ◽  
M. Breitwisch ◽  
R. Cheek ◽  
M-H. Lee ◽  
Y-H. Shih ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Poly Silicon ◽  
Change Memory

Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

2009 ◽  
Vol 30 (2) ◽  
pp. 126-129 ◽  
Author(s):  
B. Rajendran ◽  
M. Breitwisch ◽  
Ming-Hsiu Lee ◽  
G.W. Burr ◽  
Yen-Hao Shih ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Dynamic Resistance ◽  
Change Memory

Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

2011 ◽  
Vol 109 (6) ◽  
pp. 066104 ◽  
Author(s):  
Hao Jiang ◽  
Kang Guo ◽  
Hanni Xu ◽  
Yidong Xia ◽  
Kun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Microthermal Stage for Electrothermal Characterization of Phase-Change Memory

2011 ◽  
Vol 32 (7) ◽  
pp. 952-954 ◽  
Author(s):  
Jaeho Lee ◽  
SangBum Kim ◽  
Rakesh Jeyasingh ◽  
Mehdi Asheghi ◽  
H.-S. Philip Wong ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Thermoelectric Characterization of Ge2Sb2Te5 Films for Phase-Change Memory

2012 ◽  
Author(s):  
Jaeho Lee ◽  
Takashi Kodama ◽  
Yoonjin Won ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Seebeck Coefficient ◽  
Phase Change ◽  
Thermoelectric Properties ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Film Structure ◽  
Thermoelectric Effects ◽  
Crystallization Effect ◽  
Change Memory

While thermoelectric effects can strongly influence the performance of phase-change memory (PCM), the thermoelectric properties of phase-change materials for thin film structure have received little attention. This work reports the temperature and phase dependent Seebeck coefficient of 25 nm and 125 nm thick Ge2Sb2Te5 (GST) films. The Seebeck coefficient of crystalline GST films varies strongly with film thickness, due to changes in crystallization effect and grain boundary scattering. Electrothermal simulations demonstrate that the measured thermoelectric properties can strongly influence the temperature distribution and figures of merit for PCM devices. These data will facilitate cell optimization of novel phase-change memories.

Preparation and characterization of indium chalcogenide thin films: A material for phase change memory

2018 ◽  
Vol 449 ◽  
pp. 55-67 ◽  
Author(s):  
M. Pandian ◽  
P. Matheswaran ◽  
B. Gokul ◽  
R. Sathyamoorthy ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Chalcogenide Thin Films ◽  
Change Memory

Electrical characterization of anomalous cells in phase change memory arrays

2006 ◽  
Author(s):  
D. Mantegazza ◽  
D. Ielmini ◽  
A. Pirovano ◽  
B. Gleixner ◽  
A. L. Lacaita ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Memory Arrays ◽  
Change Memory
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