Concurrent tri-band GaN HEMT power amplifier using resonators in both input and output matching networks

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

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A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.1193 ◽

2011 ◽

Vol E94-C (7) ◽

pp. 1193-1198 ◽

Cited By ~ 1

Author(s):

Akihiro ANDO ◽

Yoichiro TAKAYAMA ◽

Tsuyoshi YOSHIDA ◽

Ryo ISHIKAWA ◽

Kazuhiko HONJO

Keyword(s):

Power Amplifier ◽

Average Power ◽

Gan Hemt ◽

Class F

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Improvement of Small Signal Equivalent Simulations for Power and Efficiency Matching of GaN HEMTs

Electronics ◽

10.3390/electronics10030263 ◽

2021 ◽

Vol 10 (3) ◽

pp. 263

Author(s):

Roberto Quaglia

Keyword(s):

Power Amplifier ◽

High Electron Mobility Transistor ◽

High Electron ◽

Large Signal ◽

Signal Model ◽

Or Efficiency ◽

Summary Table ◽

Matching Networks ◽

Amplifier Design ◽

Frequency Power

In high-frequency power-amplifier design, it is common practice to approach the design of reactive matching networks using linear simulators and targeting a reflection loss limit (referenced to the target impedance). It is well known that this is only a first-pass design technique, since output power or efficiency contours do not correspond to mismatch circles. This paper presents a method to improve the accuracy of this approach in the case of matching network design for power amplifiers based on gallium nitride (GaN) technology. Equivalent mismatch circles, which lay within the power or efficiency contours targeted by the design, are analytically obtained thanks to geometrical considerations. A summary table providing the parameters to use for typical contours is provided. The technique is demonstrated on two examples of power-amplifier design on the 6–12 GHz band using the non-linear large-signal model of a GaN High Electron Mobility Transistor (HEMT).

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