Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

2006 ◽  
Vol 42 (22) ◽  
pp. 1286 ◽  
Author(s):  
M. Hirata ◽  
T. Oka ◽  
M. Hasegawa ◽  
Y. Amano ◽  
Y. Ishimaru ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Broadband Wireless ◽  
Fully Integrated ◽  
Wireless Applications

A High-Power Low-Distortion GaAs HBT Power Amplifier for Mobile Terminals Used in Broadband Wireless Applications

2007 ◽  
Vol 42 (10) ◽  
pp. 2123-2129 ◽  
Author(s):  
Tohru Oka ◽  
Masatomo Hasegawa ◽  
Michitoshi Hirata ◽  
Yoshihisa Amano ◽  
Yoshiteru Ishimaru ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Mobile Terminals ◽  
Broadband Wireless ◽  
Wireless Applications ◽  
Low Distortion

A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm

Circuit World ◽  
2019 ◽  
Vol 46 (1) ◽  
pp. 1-5
Author(s):  
Yanfeng Fang ◽  
Yijiang Zhang
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Input Power ◽  
Content Type ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Peak Output Power ◽  
Saturated Output Power ◽  
Direct Input ◽  
Matching Techniques

Purpose This paper aims to implement a new high output power fully integrated 23.1 to 27.2 GHz gallium arsenide heterojunction bipolar transistor power amplifier (PA) to meet the stringent linearity requirements of LTE systems. Design/methodology/approach The direct input power dividing technique is used on the chip. Broadband input and output matching techniques are used for broadband Doherty operation. Findings The PA achieves a small-signal gain of 22.8 dB at 25.1 GHz and a saturated output power of 24.3 dBm at 25.1 GHz with a maximum power added efficiency of 31.7%. The PA occupies 1.56 mm2 (including pads) and consumes a maximum current of 79.91 mA from a 9 V supply. Originality/value In this paper, the author proposed a novel direct input dividing technique with broadband matching circuits using a low Q output matching technique, and demonstrated a fully-integrated Doherty PA across frequencies of 23.1∼27.2 GHz for long term evolution-license auxiliary access (LTE-LAA) handset applications.

scholarly journals A Fully Integrated Compact Outphasing CMOS Power Amplifier Using a Parallel-Combining Transformer with a Tuning Inductor Method

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 257 ◽  
Author(s):  
Se-Eun Choi ◽  
Hyunjin Ahn ◽  
Joonhoi Hur ◽  
Kwan-Woo Kim ◽  
Ilku Nam ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Cmos Process ◽  
Power Combining ◽  
Fully Integrated ◽  
Term Evolution ◽  
Class D ◽  
Adjacent Channel ◽  
On Chip

This work presents a compact on-chip outphasing power amplifier with a parallel-combining transformer (PCT). A series-combining transformer (SCT) and PCT are analyzed as power-combining transformers for outphasing operations. Compared to the SCT, which is typically used for on-chip outphasing combiners, the PCT is much smaller. The outphasing operations of the transformer combiners and class-D switching PAs are also analyzed. A tuning inductor method is proposed to improve the efficiency of class-D power amplifiers (PAs) with power-combining transformers in the out-of-phase mode. The proposed PA was implemented with a standard 0.18 µm CMOS process. The measured maximum drain efficiency is 37.3% with an output power of 22.4 dBm at 1.7 GHz. A measured adjacent channel leakage ratio (ACLR) of less than −30 dBc is obtained for a long-term evolution (LTE) signal with a bandwidth of 10 MHz.

DESIGN OF WIDEBAND LTE POWER AMPLIFIER WITH NOVEL DUAL STAGE LINEARIZER FOR MOBILE WIRELESS COMMUNICATION

2014 ◽  
Vol 23 (08) ◽  
pp. 1450111 ◽  
Author(s):  
U. ESWARAN ◽  
H. RAMIAH ◽  
J. KANESAN ◽  
A. W. REZA
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Supply Voltage ◽  
Path Loss ◽  
Stringent Requirement ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Channel Bandwidth ◽  
Dual Stage

In this paper, a 1 mm × 1 mm fully integrated wideband dual-stage power amplifier (PA) for long-term evolution (LTE) band 1 (1920–1980 MHz) is presented. Fabricated in a 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process, the operating gain is observed to be 31.3 dB. The PA meets the minimum adjacent channel leakage ratio (ACLR) requirement of -30 dBc for LTE with 20 MHz wide channel bandwidth up to an output power of 30 dBm with the aid of a novel dual stage linearizer. Biased at low quiescent current of less than 100 mA with a headroom consumption of 3.5 V, the power added efficiency (PAE) is observed to be 38.29% at 30 dBm. With this high linear output power, the stringent requirement of antenna path loss is nullified. PA serves to be the first reported work to achieve 30 dBm linear output power at supply voltage of 3.5 V.

scholarly journals Ka-Band Stacked Power Amplifier Supporting 3GPP New Radio FR2 Band n258 Implemented Using 45 nm CMOS SOI

2021 ◽  
Vol 11 (15) ◽  
pp. 6708
Author(s):  
Janne P. Aikio ◽  
Alok Sethi ◽  
Mikko Hietanen ◽  
Jere Rusanen ◽  
Timo Rahkonen ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Error Vector Magnitude ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Wireless Applications ◽  
Ofdm Signal ◽  
New Radio

This paper presents a fully integrated, four-stack, single-ended, single stage power amplifier (PA) for millimeter-wave (mmWave) wireless applications that was fabricated and designed using 45 nm complementary metal oxide semiconductor silicon on insulator (CMOS SOI) technology. The frequency of operation is from 20 GHz to 30 GHz, with 13.7 dB of maximum gain. The maximum RF (radio frequency) output power (Pout), power-added efficiency (PAE) and output 1 dB compression point are 20.5 dBm, 29% and 18.8 dBm, respectively, achieved at 24 GHz. The error vector magnitude (EVM) of 12.5% was measured at an average channel power of 14.5 dBm at the center of the the 3GPP/NR (third generation partnership project/new radio) FR2 band n258—i.e., 26 GHz—using a 100 MHz 16-quadrature amplitude modulation (QAM) 3GPP/NR orthogonal frequency division modulation (OFDM) signal.

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