Temperature-Dependent Current Collapse and Gate Leakage in AlGaN/GaN HEMTs With Si-rich SiN Interlayer

2021 ◽  
Author(s):  
Jielong Liu ◽  
Yuwei Zhou ◽  
Minhan Mi ◽  
Jiejie Zhu ◽  
Siyu Liu ◽  
...  
Keyword(s):  
Gate Leakage ◽  
Temperature Dependent ◽  
Current Collapse ◽  
Gan Hemts

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

2002 ◽  
Vol 194 (2) ◽  
pp. 447-451 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Current Collapse ◽  
Gan Hemts

Nonlinear Thermal Analysis of AlGaN/GaN HEMTs With Temperature-Dependent Parameters

2021 ◽  
pp. 1-6
Author(s):  
Min Tang ◽  
Liang Chen ◽  
Bo Li ◽  
Haikun Yue ◽  
Yang Tang ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Temperature Dependent ◽  
Gan Hemts

scholarly journals Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs

2020 ◽  
Vol 13 (3) ◽  
pp. 456-462
Author(s):  
Yuan Li ◽  
Yuanfu Zhao ◽  
Alex Q. Huang ◽  
Liqi Zhang ◽  
Qingyun Huang ◽  
...  
Keyword(s):  
Operating Conditions ◽  
Temperature Dependent ◽  
Enhancement Mode ◽  
Gan Hemts
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