Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

2002 ◽  
Author(s):  
G. Leroy ◽  
J. Gest ◽  
P. Tabourier ◽  
J.-C. Carru ◽  
P. Xavier ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Semiconductor Thin Films

Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

2002 ◽  
Vol 12 (3) ◽  
pp. 175-178 ◽  
Author(s):  
G. Leroy ◽  
J. Gest ◽  
P. Tabourier ◽  
J.-C. Carru ◽  
P. Xavier ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Semiconductor Thin Films

Electromigration Effect on Low Frequency Noise in Al Thin Films

1991 ◽  
Vol 30 (Part 1, No. 4) ◽  
pp. 708-710 ◽  
Author(s):  
D. M. Liou ◽  
J. Gong ◽  
C. C. Chen
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Electromigration Effect

Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

2011 ◽  
Vol 1344 ◽  
Author(s):  
M. Z. Hossain ◽  
S. L. Rumyantsev ◽  
K. M. F. Shahil ◽  
D. Teweldebrhan ◽  
M. Shur ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bulk Crystals ◽  
Noise Spectral Density ◽  
Noise Data ◽  
Device Applications ◽  
Surface Conduction

ABSTRACTWe report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.

GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS

2002 ◽  
Vol 02 (04) ◽  
pp. L349-L355 ◽  
Author(s):  
N. PALA ◽  
S. RUMYANTSEV ◽  
M. SHUR ◽  
R. GASKA ◽  
X. HU ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Elevated Temperatures ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise in Al 0.4 Ga 0.6 N thin films (50 nm) was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination noise were observed. Hooge parameter, α, was estimated to be about 7. The activation energy for observed generation-recombination noise was found to be Ea ~ 1.0 eV . This activation energy is consistent with the activation energy observed for g-r noise in AlGaN/GaN HFETs.

Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

2002 ◽  
Vol 91 (6) ◽  
pp. 3706-3710 ◽  
Author(s):  
B. H. Leung ◽  
W. K. Fong ◽  
C. F. Zhu ◽  
Charles Surya
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Low Frequency Noise
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