Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators

2011 ◽  
Vol 1344 ◽  
Author(s):  
M. Z. Hossain ◽  
S. L. Rumyantsev ◽  
K. M. F. Shahil ◽  
D. Teweldebrhan ◽  
M. Shur ◽  
...  
Keyword(s):  
Thin Films ◽  
Topological Insulators ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Bulk Crystals ◽  
Noise Spectral Density ◽  
Noise Data ◽  
Device Applications ◽  
Surface Conduction

ABSTRACTWe report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via “graphene-like” procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density SI ∞ 1/f (where f is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.

Electromigration Effect on Low Frequency Noise in Al Thin Films

1991 ◽  
Vol 30 (Part 1, No. 4) ◽  
pp. 708-710 ◽  
Author(s):  
D. M. Liou ◽  
J. Gong ◽  
C. C. Chen
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Electromigration Effect

GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS

2002 ◽  
Vol 02 (04) ◽  
pp. L349-L355 ◽  
Author(s):  
N. PALA ◽  
S. RUMYANTSEV ◽  
M. SHUR ◽  
R. GASKA ◽  
X. HU ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Elevated Temperatures ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low-frequency noise in Al 0.4 Ga 0.6 N thin films (50 nm) was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination noise were observed. Hooge parameter, α, was estimated to be about 7. The activation energy for observed generation-recombination noise was found to be Ea ~ 1.0 eV . This activation energy is consistent with the activation energy observed for g-r noise in AlGaN/GaN HFETs.

Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

2002 ◽  
Vol 91 (6) ◽  
pp. 3706-3710 ◽  
Author(s):  
B. H. Leung ◽  
W. K. Fong ◽  
C. F. Zhu ◽  
Charles Surya
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Frequency ◽  
Rf Plasma ◽  
Frequency Noise ◽  
Low Frequency Noise

scholarly journals Origin of the Low-Frequency Noise in the Asymmetric Self-Cascode Structure Composed by Fully Depleted SOI nMOSFETs

2017 ◽  
Vol 12 (2) ◽  
pp. 62-70
Author(s):  
Rafael Assalti ◽  
Rodrigo T. Doria ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Spectral Density ◽  
Gate Voltage ◽  
Low Frequency ◽  
Drain Current ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Spectral Density ◽  
Fully Depleted ◽  
Self Cascode

In this paper the origin of low-frequency noise in the Asymmetric Self-Cascode (A-SC) structure composed by Fully Depleted SOI nMOSFETs is investigated through experimental results. It is shown that the predominant noise source of the A-SC structure is linked to carrier number fluctuations, being governed by the noise generated in the transistor near the source. Larger channel doping concentrations degrade the quality of the Si-SiO2 interface and the gate oxide, which causes an increase of the normalized drain current noise spectral density, just as the reduction of the gate voltage overdrive, since there are few carriers in the channel. The A-SC structures have showed higher noise compared with single transistors. In saturation regime, the increase of the gate voltage overdrive has incremented the corner frequency, shifting the g-r noise to higher frequencies. Besides that, the normalized noise has been significantly increased when compared with the linear regime due to the rise of the drain current noise spectral density.

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