scholarly journals Investigation on nanoscale material removal process of BK7 and fused silica glass during chemical mechanical polishing

2020 ◽  
Author(s):  
Lin Wang ◽  
Ping Zhou ◽  
Ying Yan ◽  
Dongming Guo
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silica Glass ◽  
Material Removal ◽  
Fused Silica ◽  
Mechanical Polishing ◽  
Nanoscale Material ◽  
Removal Process ◽  
Fused Silica Glass

Ultrafine Surface Finishing of Fused Silica Glass Using MCF (Magnetic Compound Fluid) Wheel

2012 ◽  
Vol 565 ◽  
pp. 3-9 ◽  
Author(s):  
Yong Bo Wu ◽  
L. Jiao ◽  
Hui Ru Guo ◽  
M. Fujimoto ◽  
K. Shimada
Keyword(s):  
Surface Roughness ◽  
Process Parameters ◽  
Silica Glass ◽  
Material Removal ◽  
Permanent Magnets ◽  
High Efficiency ◽  
Fused Silica ◽  
Surface Finishing ◽  
Work Surface ◽  
Fused Silica Glass

This paper aims to develop an alternative novel technique for the high efficiency and ultrafine surface finishing of fused silica glass. A semi-fixed abrasive tool named MCF (magnetic compound fluid) wheel is produced by distributing a certain volume of MCF slurry uniformly over the whole circumference surface of ring-shaped permanent magnets. An experimental rig is constructed in house followed by experimental investigations involving effects of the MCF wheel construction and process parameters on the material removal and work-surface roughness. As a result, the performance of the developed MCF wheel in the surface finishing of fused silica glass has been confirmed, and the appropriate wheel construction and process parameters have been determined in terms of the material removal rate, the flatness of polishing area and the surface roughness, showing an extremely smooth work-surface with surface roughness of Ra0.92nm has been achieved successfully in the current work.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Spectral Properties of Spatially and Spectrally Partially Coherent Pulsed Beams in Fused-Silica Glass Medium

2010 ◽  
Vol 663-665 ◽  
pp. 108-112
Author(s):  
Chao Liang Ding ◽  
Min Teng ◽  
Zhi Guo Zhao ◽  
Liu Zhan Pan
Keyword(s):  
Spatial Correlation ◽  
Correlation Length ◽  
Silica Glass ◽  
Coherence Length ◽  
Spectral Properties ◽  
Spectral Shift ◽  
Fused Silica ◽  
Partially Coherent ◽  
Spatial Correlation Length ◽  
Fused Silica Glass

Using the coherence theory of non-stationary fields and the method of Fourier transform, the spectral properties of spatially and spectrally partially coherent Gaussian Schell-model pulsed (GSMP) beams in fused-silica glass medium are studied and analyzed numerically. It is shown that the spectral shift takes place, which depends on the position of the field point, spatial correlation length, temporal coherence length and dispersive property of medium, as GSMP beams propagate in fused-silica glass medium. The on-axis spectrum is blue-shifted, and the relative spectral shift increases with increasing propagation distance, and decreases as the spatial correlation length and temporal coherence length increases, and then approaches an asymptotic value. The dispersive property of medium plays an important role in the spectral properties of spatially and spectrally partially coherent beams.

Computer models of micrometeoroid impact on fused silica glass mirrors

2003 ◽  
Vol 29 (1-10) ◽  
pp. 203-214 ◽  
Author(s):  
David Davison ◽  
Burton Cour-Palais ◽  
Xiangyang Quan ◽  
T.J. Holmquist ◽  
Lester M. Cohen ◽  
...  
Keyword(s):  
Silica Glass ◽  
Computer Models ◽  
Fused Silica ◽  
Fused Silica Glass

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

scholarly journals Cracking Behavior of Fused Silica Glass in Sphere Indentation

2003 ◽  
Vol 46 (3) ◽  
pp. 415-418 ◽  
Author(s):  
Hatsuhiko USAMI ◽  
Kazuto OHASHI ◽  
Shinnya SASAKI ◽  
Junji SUGISHITA
Keyword(s):  
Silica Glass ◽  
Fused Silica ◽  
Cracking Behavior ◽  
Fused Silica Glass
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