Material removal model of chemical mechanical polishing for fused silica using soft nanoparticles

2016 ◽  
Vol 88 (9-12) ◽  
pp. 3515-3525 ◽  
Author(s):  
Defu Liu ◽  
Guanglin Chen ◽  
Qing Hu
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Fused Silica ◽  
Mechanical Polishing ◽  
Material Removal Model ◽  
Removal Model ◽  
Soft Nanoparticles

CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

2020 ◽  
pp. 2050036
Author(s):  
YUANYUAN FANG ◽  
HONGBO HE ◽  
LUNZHE WU ◽  
ZHE WANG ◽  
AIHUAN DUN ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Scanning Probe ◽  
Basic Material ◽  
Atomic Step ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Material Removal Model ◽  
Removal Model

In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18[Formula: see text]nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

Material removal model for chemical–mechanical polishing considering wafer flexibility and edge effects

Wear ◽  
2004 ◽  
Vol 257 (5-6) ◽  
pp. 496-508 ◽  
Author(s):  
Jongwon Seok ◽  
Cyriaque P. Sukam ◽  
Andrew T. Kim ◽  
John A. Tichy ◽  
Timothy S. Cale
Keyword(s):  
Edge Effects ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Material Removal Model ◽  
Removal Model

scholarly journals Influence of the Molecular Adhesion Force on the Indentation Depth of a Particle into the Wafer Surface in the CMP Process

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Zhou Jianhua ◽  
Jiang Jianzhong ◽  
He Xueming
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Indentation Depth ◽  
Adhesion Force ◽  
Great Influence ◽  
Wafer Surface ◽  
Molecular Adhesion ◽  
Material Removal Model ◽  
Removal Model ◽  
Theoretical Analyses

By theoretical calculation, the external force on the particle conveyed by pad asperities and the molecular adhesion force between particle and wafer are compared and analyzed quantitatively. It is confirmed that the molecular adhesion force between particle and wafer has a great influence on the chemical mechanical polishing (CMP) material removal process. Considering the molecular adhesion force between particle and wafer, a more precise model for the indentation of a particle into the wafer surface is developed in this paper, and the new model is compared with the former model which neglected the molecular adhesion force. Through theoretical analyses, an approach and corresponding critical values are applied to estimate whether the molecular adhesion force in CMP can be neglected. These methods can improve the precision of the material removal model of CMP.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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