Growth of Twinned beta -Silicon Carbide Whiskers by the Vapor-Liquid-Solid Process

1987 ◽  
Vol 70 (11) ◽  
pp. C-338-C-341 ◽  
Author(s):  
Remco Jong ◽  
Ronald A. Mccauley ◽  
Paul Tambuyser
Keyword(s):  
Silicon Carbide ◽  
Vapor Liquid Solid ◽  
Silicon Carbide Whiskers ◽  
Vapor Liquid

The Microstructure of Ceramic Whiskers

1991 ◽  
Vol 49 ◽  
pp. 918-919
Author(s):  
L. F. Allard ◽  
T. A. Nolan
Keyword(s):  
Silicon Carbide ◽  
Second Phase ◽  
Tin Whisker ◽  
Ferrous Alloys ◽  
Vapor Liquid Solid ◽  
Rice Hulls ◽  
Aspect Ratios ◽  
Silicon Carbide Whiskers ◽  
Synthetic Materials ◽  
Sic Whiskers

The internal structure and surface crystallography of ceramic whiskers are of interest because of their increasing importance as second phase reinforcements in a variety of matrix materials. Whiskers are typically 0.5 to 5 um in diameter with aspect ratios of 10 to 100 or more. Silicon carbide whiskers are the best known; they are usually grown by vapor-liquid-solid (VLS) or other processes from either natural (e.g. rice hulls) or synthetic materials. Titanium nitride whiskers are also of interest because of their potential for applications where SiC whiskers are not suitable (e.g. ferrous alloys). This paper highlights some of the details of SiC and TiN whisker ultrastructure.

Vapor-liquid-solid and melt growth of silicon carbide

1967 ◽  
Vol 1 (5) ◽  
pp. 255-262 ◽  
Author(s):  
C.E. Ryan ◽  
I. Berman ◽  
R.C. Marshall ◽  
D.P. Considine ◽  
J.J. Hawley
Keyword(s):  
Silicon Carbide ◽  
Vapor Liquid Solid ◽  
Melt Growth ◽  
Vapor Liquid

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

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