Thermal and Electrical Properties in Plasma-Activation-Sintered Silicon Carbide with Rare-Earth-Oxide Additives

2004 ◽  
Vol 84 (10) ◽  
pp. 2448-2450 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Rong-Jun Xie ◽  
Amiya K. Mukherjee
Keyword(s):  
Silicon Carbide ◽  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Plasma Activation ◽  
Thermal And Electrical Properties ◽  
Sintered Silicon

Effects of rare-earth oxide and alumina additives on thermal conductivity of liquid-phase-sintered silicon carbide

2003 ◽  
Vol 18 (8) ◽  
pp. 1854-1862 ◽  
Author(s):  
You Zhou ◽  
Kiyoshi Hirao ◽  
Yukihiko Yamauchi ◽  
Shuzo Kanzaki
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Rare Earth ◽  
Liquid Phase ◽  
Point Defects ◽  
Rare Earth Oxide ◽  
Low Oxygen ◽  
Sic Ceramics ◽  
Sintered Silicon ◽  
Thermal Conductivities

SiC ceramics were prepared from a β–SiC powder doped with two different sintering additives—a mixture of La2O3and Y2O3and a mixture of Al2O3and Y2O3—by hot pressing and annealing. Their microstructures, phase compositions, lattice oxygen contents, and thermal conductivities were evaluated. The SiC doped with rare-earth oxides attained thermal conductivities in excess of 200 W/(m K); however, the SiC doped with additives containing alumina had thermal conductivities lower than 71 W/(m K). The high thermal conductivity of the rare-earth-oxide-doped SiC was attributed to the low oxygen content in SiC lattice, high SiC–SiC contiguity, and lack of β– to α–SiC polytypic transformation. The low thermal conductivity of the alumina-doped SiC was attributed to the point defects resulting from the dissolution of Al2O3into SiC lattice and the occurrence of polytypic transformation.

scholarly journals Role of rare earth oxide particles on the oxidation behaviour of silicon carbide coated 2.5D carbon fibre preforms

Open Ceramics ◽  
2020 ◽  
Vol 2 ◽  
pp. 100018
Author(s):  
T.S.R.C. Murthy ◽  
Lucas Reeman ◽  
Ji Zou ◽  
Vinothini Venkatachalam ◽  
Ben Baker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Rare Earth ◽  
Carbon Fibre ◽  
Rare Earth Oxide ◽  
Oxidation Behaviour ◽  
Oxide Particles

Design, Synthesis, Structural and Textural Characterization, and Electrical Properties of Mesoporous Thin Films Made of Rare Earth Oxide Binaries

2009 ◽  
Vol 21 (11) ◽  
pp. 2184-2192 ◽  
Author(s):  
Jessie Hierso ◽  
Ozlem Sel ◽  
Armelle Ringuede ◽  
Christel Laberty-Robert ◽  
Luc Bianchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Design Synthesis ◽  
Textural Characterization ◽  
Mesoporous Thin Films

Rare-earth oxide additives for the sintering of silicon carbide

2013 ◽  
Vol 38 ◽  
pp. 124-130 ◽  
Author(s):  
Alfian Noviyanto ◽  
Dang-Hyok Yoon
Keyword(s):  
Silicon Carbide ◽  
Rare Earth ◽  
Rare Earth Oxide

Effect of Sm2O3 on the Electrical Properties of TiO2-Ta2O5-Based Capacitor-Varistor Ceramics

2011 ◽  
Vol 213 ◽  
pp. 246-249
Author(s):  
Tian Guo Wang ◽  
Qun Qin ◽  
Dong Jian Zhou
Keyword(s):  
Rare Earth ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Rare Earth Oxide ◽  
Dielectric Constants ◽  
Second Phase ◽  
Electrical Behavior ◽  
Effective Boundary ◽  
Electrical Permittivity ◽  
Change Of Microstructure

TiO2 ceramics doped with 0.1 mol% Ta2O5 and different concentrations of rare earth oxide Sm2O3 were obtained by sintering at 1450 °C. As a varisor material, the microstructure, the nonlinear electrical behavior and dielectric properties of these ceramics were investigated. SEM and XRD were carried out to study the change of microstructure. The results show that there exist second phase (Sm2Ti2O3) on the surface on the surface of TiO2 grains. The ceramics have nonlinear coefficients of α = 2.0-4.0 and ultrahigh relative dielectric constants which is up to 104. The sample doped with 0.5 mol% Sm2O3 exhibits high nonlinear constant of 3.7, low breakdown voltage of 21.5 v/mm, ultrahigh electrical permittivity of 4.25× 104 and low tanδ of 0.37. It is suggested that the sample doped with 0.5 mol% Sm2O3 forms the most effective boundary barrier layer. The defects theory was introduced to illustrate the nonlinear electrical behavior of TiO2-Ta2O5-Sm2O3 varistor ceramics.

Modification of structural, thermal, and electrical properties of PVA by addition of silicon carbide nanocrystals

2015 ◽  
Vol 132 (34) ◽  
pp. n/a-n/a ◽  
Author(s):  
Isha Saini ◽  
Annu Sharma ◽  
Jyoti Rozra ◽  
Rajnish Dhiman ◽  
Sanjeev Aggarwal ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Thermal And Electrical Properties
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