Development of GaSb Photoreceiver Arrays for Solar Thermophotovoltaic Systems

2006 ◽  
Vol 129 (3) ◽  
pp. 283-290 ◽  
Author(s):  
Diego Martín ◽  
Carlos Algora ◽  
Victoria Corregidor ◽  
Alejandro Datas
Keyword(s):  
Circuit Simulation ◽  
Photovoltaic Cells ◽  
Current Source ◽  
Simulation Software ◽  
Solar Photovoltaics ◽  
Nonuniform Illumination ◽  
Conversion System ◽  
In Series ◽  
Cell Arrays ◽  
Grid Design

In comparison to conventional solar photovoltaics, where sun radiation is converted into electricity directly by solar cells, solar thermophotovoltaic (STPV) conversion has some specific advantages. These advantages come from the fact that in thermophotovoltaics the photon radiator is always inside the conversion system and near the photovoltaic cells. For these reasons we are developing small prototypes with sun heated emitters and photoreceiver arrays to be installed inside complete STPV systems. In order to achieve these complete STPV systems, the first step is to determine the optimum way of packaging the TPV cells into STPV arrays, choosing the best series/parallel configurations depending on the TPV cell band gap, the size of arrays, and the materials. This is the goal of this paper. To carry out the calculations, 18 and 24 cell arrays have been connected following different series and parallel configurations, using the PSPICE commercial circuit-simulation software. Each TPV cell is simulated as a block consisting of the well-known photogenerated current source, two dark diodes of ideality factors equal to one and two, and two resistances, one in parallel and the other in series. As a result, recommendations about the size and front grid design of the GaSb cells are obtained. When the optimally designed cells are connected to be included in two specific systems, recommendations about the best parallel/series connection are achieved. Evaluation on the performance of the arrays at nonuniform illumination is also carried out. The first photoreceiver arrays are being constructed and implemented in real STPV systems following these recommendations.

scholarly journals FEATURES OF SECTIONING THE TURNS OF THE TRANSFORMING ELEMENT OF THE TRANSFORMER-KEY ACTUATING STRUCTURE IN THE BOOST CHANNEL OF THE DC POWER SYSTEM

2020 ◽  
Vol 2020 (6) ◽  
pp. 25-31
Author(s):  
K.O. Lypkivskyi ◽  
◽  
A.G. Mozharovskyi ◽  
Keyword(s):  
High Efficiency ◽  
A Priori ◽  
Current Source ◽  
Voltage Regulation ◽  
Specific Class ◽  
Voltage Supply ◽  
Emergency Situations ◽  
Time Control ◽  
Finite Set ◽  
In Series

One of the effective ways to ensure the normalized operation of the electricity consumer with an unstable primary power source is the organization of the corresponding voltage supply channel. In a system with a direct current source, the voltage supply is implemented by introducing a rectifier semiconductor bridge in series with the load, into the diagonal of which AC energy is supplied, the voltage level of which is purposefully changed by a corresponding converter with a transformer- and-switches executive structure (TSES). To achieve high efficiency of the use of key elements of TSVS, it is proposed to assign the functions of rectification and voltage regulation to a specific class of TSES – a multilevel rectifier consisting of a transformer and a finite set of parallel connected pairs of serially connected thyristors, the common points of which are connected to the corresponding taps of the sectioned secondary turns of the transformer. By discrete-time control of thyristors, it is necessary to regulate voltage levels, it is attached. The linearity of the scale of these levels is ensured by the proposed transformer sectioning law. This power supply system is characterized by small energy losses in semiconductor elements (only two thyristors work at a time), and the a priori impossibility of emergency situations during transitions from one level to another. References 14, figures 3, tables 3.

Mathematical models of resonance and antiresonance processes

2021 ◽  
pp. 17-27
Author(s):  
V. D. Pavlov ◽  
Keyword(s):  
Current Source ◽  
Voltage Source ◽  
Complex Method ◽  
Connecting Rod ◽  
Parallel Connection ◽  
Near Resonance ◽  
Serial Connection ◽  
Mechanical Analogue ◽  
In Series ◽  
Pneumatic Cylinders

The use of the symbolic (complex) method has significantly simplified the study of resonance and near-resonance phenomena, in particular, it has made it possible to deeply unify and formalize the consideration of various mechanical systems. The cumbersome and time-consuming operations associated with composing and solving differential equations have been replaced by simple algebraic transformations. The method is based on the mechanical analogue of Ohm’s law in a complex representation and the concept of mechanical reactance, resistance, impedance, susseptance, conductance and admittance. Resonances and antiresonances of forces and velocities are determined. Resonances occur when the elements are connected in parallel with a force source, or when the elements are connected in series with a velocity source. Antiresonances occur when a parallel connection and a speed source are combined, or a serial connection and a force source are combined. These concepts are a generalization to mechanics of the concepts of «voltage source» and «current source» from theoretical electrical engineering. The closest to the source of speed in its properties is a crank-rocker (connecting rod) mechanism with a massive flywheel. The source of force corresponds more to the rod of the significantly smaller of the two connected pneumatic cylinders.

scholarly journals Simulation, Design, and Test of a Dual-Differential D-Dot Overvoltage Sensor Based on the Field-Circuit Coupling Method

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3413 ◽  
Author(s):  
Pengcheng Zhao ◽  
Jingang Wang ◽  
Qian Wang ◽  
Qianbo Xiao ◽  
Ruiqiang Zhang ◽  
...  
Keyword(s):  
Steady State ◽  
Power Transmission ◽  
Circuit Simulation ◽  
Structural Parameters ◽  
Equivalent Circuit Model ◽  
Simulation Software ◽  
Power Grids ◽  
Coupling Method ◽  
Transient Performance ◽  
Simulation Design

Accurate measurement of overvoltage in power grids is of great significance to study the characteristics of overvoltage and design of insulation coordination. Based on the research of D-dot voltage sensor, we designed a Dual-Differential D-dot overvoltage sensor. In order to quantify the structural parameters of the sensor, improve the performance and measurement accuracy of the sensor. The Field-Circuit Coupling method was proposed to be used in the parameter design of D-dot overvoltage sensor. The joint simulation of space electromagnetic field model and equivalent circuit model of the Dual-Differential D-dot overvoltage sensor was established with the finite element simulation software Ansoft Maxwell and circuit simulation software Simplorer. Finally, the actual sensor was manufactured. A test platform was built to verify the steady-state and transient performance of the sensor. The results show that the Dual-Differential D-dot sensor has excellent steady-state and transient performance, the error of phase and amplitude are small, and the sensor can achieve the non-contact measurement of power transmission line. Simultaneously, the rationality of the Field-Circuit Coupling method was further verified.

Dual-Band BPF Using Simple SIR Structure

2013 ◽  
Vol 655-657 ◽  
pp. 1614-1618
Author(s):  
Wen Ko ◽  
Man Long Her ◽  
Yu Lin Wang ◽  
Ming Wei Hsu
Keyword(s):  
Transmission Line ◽  
Bandpass Filter ◽  
Low Frequency ◽  
Basic Structure ◽  
Simulation Software ◽  
Dual Band ◽  
Center Frequency ◽  
Resonant Circuit ◽  
In Series ◽  
Stepped Impedance Resonator

This paper studies a very simple structure for dual-band bandpass filter. Filter is composed of two asymmetric coupled resonator circuit by two sets of different size stepped impedance resonator. This circuit applied microstrip line, coupling principle and impedance ratio by controlling the stepped impedance resonator to control the center frequency 2.6/5.2 GHz of the first and the second bandpass filter. The basic structure of the filter is constituted by the three sections of transmission line and two sets of SIR, that is, in two gaps of the three sections of transmission line parallel connection the equivalent inductances and capacitor of the two sets of SIR in series with the resonant circuit (LCL) to constitute bandpass filter. The low frequency 2.6 GHz is through the upper half of low impedance SIR, and the high frequency 5.2 GHz is through the lower half of high impedance SIR. This paper presents the design of asymmetric SIR-based dual-band bandpass filter, the filter structure is simple, easy to produce and can control the characteristics of the passband center frequency. By electromagnet simulation software( IE3D ) to simulate, the actual production of the circuit using a vector analyzer measurement, simulation and measurement results show good consistency.

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