Experimental Study of Electrical Switching Characteristics of Vanadium Oxide Thin Films on Bipolar Plates for Improving Thaw-at-Start

Author(s):  
Hye-Mi Jung ◽  
Jung-Hun Noh ◽  
Sukkee Um

The ultimate goal of cold start of hydrogen-powered polymer electrolyte fuel cell vehicles is to minimize the significant system thaw energy requirement and to achieve the short time period desired for freeze start (e.g. less than 30 seconds) in a subfreezing environment. As part of an effort to improve cold start capability for fuel cell vehicles, this work presents a new thaw-at-start strategy using electrical characteristics of vanadium oxide thin films as self-heating source at sub-zero temperature. Vanadium-based thin film coated on the surface of flat bipolar plates (e.g. carbon-based graphite and metallic bipolar plates) have been synthesized by a dip-coating method via aqueous sol-gel chemistry. Subsequently, the detailed in-/ex-situ analyses of the thin films have been carried out using diverse diagnostic techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) to investigate the chemical composition, crystallinity, and microstructure. In addition, electrical switching characteristics of the thin films on bipolar plates was cautiously observed over a temperature range from −20°C to 80°C by means of 4-point probes installed in a thermo -hygrostat. By doing so, it has been possible to correctly infer the relationship between a tendency of the thermally-induced electrical switching hysteresis and bipolar plate materials. Also, comprehensive theoretical study on the basis of the experimental results have been performed to estimate the heat dissipation rate by Joule heating from the solid thin films on bipolar plates for the rapid cold-start operation of fuel cell vehicles.

Author(s):  
X. Y. Wei ◽  
M. Hu ◽  
F. Wang ◽  
J. Wei ◽  
K. L. Zhang

In this paper, the effects of deposition temperatures on the resistive switching characteristics of polycrystalline vanadium oxide thin films have been investigated. VOx thin films were prepared by reactive sputtering at various deposition temperatures (RT, 250 °C, 350 °C, and 450 °C, respectively). X-ray photoelectron spectroscopy revealed the compositions of VOx thin films. Electrical switching has been observed in Cu(tip)/VOx/Cu memory units by Semiconductor Device Analyzer. Crystalline characterizations revealed that as-deposited (RT) film was amorphous, the films crystallized into different phases (e.g. VO2, V2O5, VO1.86 etc.) with increasing the deposition temperatures. The VOx memory units have low Vset and Vreset. Furthermore, their set voltage decreased from 1.52 V to 0.45 V and reset voltage decreased from 1.01 V to 0.41 V with increasing the deposition temperatures from 250 °C to 450 °C, respectively. The thin films have three orders of change in resistivity between ON-state and OFF-state except as-deposited film. The vanadium oxide thin film can be a promising material for low power nonvolatile memory applications.


RSC Advances ◽  
2020 ◽  
Vol 10 (44) ◽  
pp. 26588-26593
Author(s):  
Yejin Kim ◽  
Gwang Yeom Song ◽  
Raju Nandi ◽  
Jae Yu Cho ◽  
Jaeyeong Heo ◽  
...  

X-ray absorption spectroscopy reveals the local structures of atomic-layer-deposited vanadium oxide films subject to heat treatments.


2013 ◽  
Vol 652-654 ◽  
pp. 1747-1750
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Cui Zhi Dong ◽  
Kuai Zhang ◽  
Xiudong Zhu

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po2) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO2. The surface roughness of the film increase for the longer time annealing.


2011 ◽  
Vol 57 (2) ◽  
pp. 182-186 ◽  
Author(s):  
A. Bouzidi ◽  
N. Benramdane ◽  
S. Bresson ◽  
C. Mathieu ◽  
R. Desfeux ◽  
...  

2009 ◽  
Vol 94 (22) ◽  
pp. 222110 ◽  
Author(s):  
S. S. N. Bharadwaja ◽  
C. Venkatasubramanian ◽  
N. Fieldhouse ◽  
S. Ashok ◽  
M. W. Horn ◽  
...  

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