Three-Dimensional Analysis on the Performance of the Thermoelectric Micro-Cooler

2005 ◽  
Author(s):  
Kong Hoon Lee ◽  
Ook Joong Kim
Keyword(s):  
Temperature Difference ◽  
Three Dimensional ◽  
Coefficient Of Performance ◽  
Thermoelectric Cooler ◽  
Small Temperature ◽  
Small Current ◽  
Thermoelectric Element ◽  
Maximum Value ◽  
Column Type ◽  
P Type

Three-dimensional numerical analysis has been carried out using the FEMLAB software package to figure out the performance of the thermoelectric micro-cooler. A small-size and column-type thermoelectric cooler is considered and Bi2Te3 and Sb2Te3 are selected as the n- and p-type thermoelectric materials, respectively. The thickness of the thermoelectric element considered is 5 to 20 μm and the thickness affects the performance of the cooler. The effect of parameters such as the temperature difference, the current, and the thickness of the thermoelectric element on the performance of the cooler has also been investigated. The coefficient of performance (COP) is the primary factor to evaluate the performance of the cooler and the COP varies with the parameters. The COP has the maximum value at a certain current and the value decreases with the temperature difference or the thickness. The predicted results also show that the performance can be improved for thick thermoelectric element at the small temperature difference and small current.

Miniaturized Thermoelectric Cooler

2002 ◽  
Author(s):  
Luciana W. da Silva ◽  
Massoud Kaviany
Keyword(s):  
Electrical Contact ◽  
Electrical Circuit ◽  
Film Deposition ◽  
Coefficient Of Performance ◽  
Optimum Number ◽  
Thermoelectric Cooler ◽  
Seebeck Coefficients ◽  
Column Type ◽  
Operating Current ◽  
P Type

Vapor-deposited bismuth telluride (n-type) and antimony telluride (p-type) films are used in a micro, column-type, patterned thermoelectric cooler. The optimum number of thermoelectric pairs and operating current are predicted. Such devices contain a number of metal/thermoelectric and metal/elecrical-insulator interfaces. In the analysis, various interfacial resistances (phonon and electron boundary resistances and thermal and electrical contact resistances) have been included. The boundary resistances cause a reduction in the thermal conductivity (desirable) and a reduction in the Seebeck coefficient (undesirable) of the thermoelectric elements. The contact resistances reduce the overall device performance. In the fabrication, the stoichiometry of the deposited thermoelectric films, the patterned film deposition, and the selection of the conducting connectors, are discussed. The thermoelectric films are about 4 μm thick and are deposited on patterned platinum (first trial layer for connectors), which are in turn deposited on oxide coated silicon wafers. The top, suspended connectors that close the electrical circuit are bonded to the surface to be cooled. The non-uniformity of the composition in the thermoelectric films influences the measured Seebeck coefficients. The analysis shows that a coefficient of performance of 0.38 is obtainable for a wireless micro sensor application.

scholarly journals Холодильный коэффициент составной охлаждающей термоэлектрической ветви

2019 ◽  
Vol 53 (5) ◽  
pp. 685
Author(s):  
И.А. Драбкин
Keyword(s):  
Temperature Difference ◽  
Coefficient Of Performance ◽  
Large Temperature ◽  
Small Temperature ◽  
Energy Characteristics

AbstractOne of the main energy characteristics of a cooling leg is the maximum available temperature difference (Δ T _max). Its increase indicates an increase in the coefficient of performance (COP) at all temperatures. The use of a segmented leg makes it possible to increase the Δ T _max value; however, the maximum available COP increases only at large temperature differences, whereas at small temperature differences the maximum available COP is even smaller than in a simple leg.

scholarly journals Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction Photodetector With Fast Response and High Detectivity

2021 ◽  
Vol 9 ◽  
Author(s):  
Qi Liu ◽  
Ming Yang ◽  
Jiangwei Zhang ◽  
Mingliang Yang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Three Dimensional ◽  
Fast Response ◽  
Current Response ◽  
Organic Thin Film ◽  
Small Current ◽  
Dirac Semimetal ◽  
High Level ◽  
P Type

As a typical three-dimensional Dirac semimetal (3D DSM), Cd3As2 possess ultrahigh carrier mobility, high level of full spectral absorption, fast electron transmission speed, and high photocurrent response, which enable wide applications in infrared photodetector. However, the large dark current of the detector based on Cd3As2 thin film limits the application of the small current response. Hence, we demonstrated heterojunction photodetectors based on n-type 3D DSM Cd3As2 (pristine and Zn doped) and p-type organic (PbPc) by depositing PbPc thin film on Cd3As2 (pristine and Zn doped) thin film using thermal deposition method. These photodetectors can detect the radiation wavelength from 405 to 1,550 nm at room temperature. It is remarkable that this thin film heterojunction photodetector exhibits high detectivity (3.95 × 1011 Jones) and fast response time (160 μs) under bias voltage, which is significantly improved vs. that of Cd3As2-based devices. The excellent performances are attributed to the strong built-in electric field at the interface of p-n junction, which is beneficial for efficient photocarriers collection and transportation. These results show that DSM/organic thin film heterojunction has excellent performance in the application of photodetectors. By combining 3D DSM with organic to form heterojunction, it provides a feasible solution for high-performance photodetectors.

Measured Performance of a Micro Thermoelectric Cooler

Volume 4 ◽  
2004 ◽  
Author(s):  
Luciana W. da Silva ◽  
Massoud Kaviany ◽  
Mehdi Asheghi
Keyword(s):  
Electrical Resistance ◽  
Infrared Camera ◽  
Surface Radiation ◽  
Thermoelectric Cooler ◽  
Cooling Load ◽  
Cooling Performance ◽  
Column Type ◽  
P Type ◽  
Surface Convection ◽  
Substrate Temperatures

The measured performance of a column-type micro thermoelectric cooler, fabricated using vapor deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb2Te3 and n-type Bi2Te3 with an average thickness of 4.5 μm, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130°C, are −74 μV/K and 3.6×10−5Ω-m (n-type), and 97 μV/K and 3.1×10−5Ω-m (p-type). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 μm is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The temperatures of the cold and hot surfaces are obtained with an infrared camera. The average cooling achieved is about 1 K. The measured overall electrical resistance ranges from 51 to 58 Ω. Current challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector fabrication.

scholarly journals PENGARUH HAMBATAN INTERNAL TERHADAP DAYA OUTPUT ELEMEN TERMOELEKTRIK GENERATOR TIPE 10W-4V-40s

2018 ◽  
Vol 15 (1) ◽  
pp. 67
Author(s):  
Eri Wiyadi ◽  
Lazuardi Umar
Keyword(s):  
Output Power ◽  
Temperature Difference ◽  
Room Temperature ◽  
Internal Resistance ◽  
Heat Energy ◽  
Cold Side ◽  
Thermoelectric Element ◽  
Maximum Value ◽  
Generator Type ◽  
Resistance Value

Thermoelectric generator Type 10W-4V-40s powered by Seebeck effect by utilizing temperature difference in both sides of the element. The hot side (Th) of a TEG element is placed on a stand made of Aluminum-Dural material and given a heat source derived from a heater, on the cold side (Tc) TEG element installed heatsink to reduce heat energy through the cold side and keep the temperature low. The measurement of output power (PL) is done by variation of RL from 0 Ω to 20 Ω under temperature difference conditions (ΔT) varies with constant Tc at 30ºC, the result of the research indicates that the output power (PL) of the thermoelectric element is maximum at RL = 1 Ω when the minimum load decreases and is proportional to the increase in RL resistance. The internal resistance value (Rint) of the TEG element increases in proportion to the magnitude of ΔT on both sides of the element, on Tc and Th at room temperature (30ºC) the value of Rint is 0.85 Ω and the maximum value at ΔT = 50ºC is 1,043 Ω. This indicates that the TEG element depends not only on ΔT on both sides of the module, but also depends on the amount of temperature range used.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

Simulation of Three-Dimensional Stress Distribution in Compression Dies

2008 ◽  
Vol 575-578 ◽  
pp. 449-454
Author(s):  
Chu Yun Huang ◽  
Sai Yu Wang ◽  
Tao Yang ◽  
Xu Dong Yan
Keyword(s):  
Stress Distribution ◽  
Computer Aided Design ◽  
Three Dimensional ◽  
Distribution Model ◽  
Extrusion Dies ◽  
Maximum Value ◽  
Multiple Unit ◽  
Stress Freezing Method ◽  
Experimental Values ◽  
Aided Design

The stress fields of rectangular and T shape compression dies were simulated by three dimensional photo-elasticity of stress freezing method. The rules of stress distribution of σx, σy, σz on the surface of rectangular and T-shaped dies were discovered, and the rules were also found inside the dies. The results indicate that the stress distribution of rectangular die is similar to that of T shape die. Obvious stress concentration in corner of die hole was observed. σz rises from die hole to periphery until it achieves maximum value then it diminishes gradually, and σz between die hole and fix diameter zone is higher than it is in other position. At the same time, the equations of stress field of extrusion dies were obtained by curved surface fitting experimental values in every observed point with multiple-unit regression analysis method and orthogonal transforms. These works can provide stress distribution model for die computer aided design and make.

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