scholarly journals Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction Photodetector With Fast Response and High Detectivity

2021 ◽  
Vol 9 ◽  
Author(s):  
Qi Liu ◽  
Ming Yang ◽  
Jiangwei Zhang ◽  
Mingliang Yang ◽  
Jun Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Three Dimensional ◽  
Fast Response ◽  
Current Response ◽  
Organic Thin Film ◽  
Small Current ◽  
Dirac Semimetal ◽  
High Level ◽  
P Type

As a typical three-dimensional Dirac semimetal (3D DSM), Cd3As2 possess ultrahigh carrier mobility, high level of full spectral absorption, fast electron transmission speed, and high photocurrent response, which enable wide applications in infrared photodetector. However, the large dark current of the detector based on Cd3As2 thin film limits the application of the small current response. Hence, we demonstrated heterojunction photodetectors based on n-type 3D DSM Cd3As2 (pristine and Zn doped) and p-type organic (PbPc) by depositing PbPc thin film on Cd3As2 (pristine and Zn doped) thin film using thermal deposition method. These photodetectors can detect the radiation wavelength from 405 to 1,550 nm at room temperature. It is remarkable that this thin film heterojunction photodetector exhibits high detectivity (3.95 × 1011 Jones) and fast response time (160 μs) under bias voltage, which is significantly improved vs. that of Cd3As2-based devices. The excellent performances are attributed to the strong built-in electric field at the interface of p-n junction, which is beneficial for efficient photocarriers collection and transportation. These results show that DSM/organic thin film heterojunction has excellent performance in the application of photodetectors. By combining 3D DSM with organic to form heterojunction, it provides a feasible solution for high-performance photodetectors.

Ultraviolet to Long-Wave Infrared Photodetectors Based on a Three-Dimensional Dirac Semimetal/Organic Thin Film Heterojunction

2019 ◽  
Vol 10 (14) ◽  
pp. 3914-3921 ◽  
Author(s):  
Ming Yang ◽  
Jun Wang ◽  
Yunkun Yang ◽  
Qi Zhang ◽  
Chunhui Ji ◽  
...  
Keyword(s):  
Thin Film ◽  
Three Dimensional ◽  
Infrared Photodetectors ◽  
Organic Thin Film ◽  
Dirac Semimetal ◽  
Long Wave ◽  
Long Wave Infrared

scholarly journals Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 92
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Thin Film Transistor ◽  
Three Dimensional ◽  
Mass Spectrometry Analysis ◽  
Spectrometry Analysis ◽  
Reported Data ◽  
P Type

Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor’s turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn–O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips.

scholarly journals High performance p-type organic thin film transistors with an intrinsically photopatternable, ultrathin polymer dielectric layer

2013 ◽  
Vol 14 (11) ◽  
pp. 3070-3082 ◽  
Author(s):  
Andreas Petritz ◽  
Archim Wolfberger ◽  
Alexander Fian ◽  
Joachim R. Krenn ◽  
Thomas Griesser ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Polymer Dielectric ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Organic Electronics

2020 ◽  
Author(s):  
Stephen R. Forrest
Keyword(s):  
Thin Film ◽  
Organic Electronics ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Devices ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Organic Thin Film ◽  
Graduate Studies ◽  
Organic Light

Organic electronics is a platform for very low cost and high performance optoelectronic and electronic devices that cover large areas, are lightweight, and can be both flexible and conformable to irregularly shaped surfaces such as foldable smart phones. Organics are at the core of the global organic light emitting device (OLED) display industry, and also having use in efficient lighting sources, solar cells, and thin film transistors useful in medical and a range of other sensing, memory and logic applications. This book introduces the theoretical foundations and practical realization of devices in organic electronics. It is a product of both one and two semester courses that have been taught over a period of more than two decades. The target audiences are students at all levels of graduate studies, highly motivated senior undergraduates, and practicing engineers and scientists. The book is divided into two sections. Part I, Foundations, lays down the fundamental principles of the field of organic electronics. It is assumed that the reader has an elementary knowledge of quantum mechanics, and electricity and magnetism. Background knowledge of organic chemistry is not required. Part II, Applications, focuses on organic electronic devices. It begins with a discussion of organic thin film deposition and patterning, followed by chapters on organic light emitters, detectors, and thin film transistors. The last chapter describes several devices and phenomena that are not covered in the previous chapters, since they lie outside of the current mainstream of the field, but are nevertheless important.

scholarly journals A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  
Keyword(s):  
Thin Film ◽  
Evolutionary Algorithm ◽  
Design Stage ◽  
Model Parameters ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Multi Objective ◽  
Application Fields ◽  
Channel Lengths ◽  
P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60Derivative

2010 ◽  
Vol 3 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yoshinori Horii ◽  
Koichi Sakaguchi ◽  
Masayuki Chikamatsu ◽  
Reiko Azumi ◽  
Kiyoshi Yase ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Long Chain

Cyano-Substituted Head-to-Head Polythiophenes: Enabling High-Performance n-Type Organic Thin-Film Transistors

2019 ◽  
Vol 11 (10) ◽  
pp. 10089-10098 ◽  
Author(s):  
Hang Wang ◽  
Jun Huang ◽  
Mohammad Afsar Uddin ◽  
Bin Liu ◽  
Peng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Thickness-Controlled Three-Dimensional Dirac Semimetal for Scalable High-Performance Terahertz Optoelectronics

ACS Photonics ◽  
2021 ◽  
Author(s):  
Xiaomei Yao ◽  
Shengxi Zhang ◽  
Qiang Sun ◽  
Peizong Chen ◽  
Xutao Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Three Dimensional ◽  
Dirac Semimetal
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