Effects of Texture on Thermoelectric Power in Ti-6Al-4V

Author(s):  
Hector Carreon

Ti-6A1-4V alloy exhibits a very strong anisotropic texture caused by the existence of a preferred crystallographic orientation in the polycrystalline microstructure. This crystallographic alignment can result in anisotropic behavior of the material so that the material properties are different depending on whether they are measured in perpendicular or parallel direction. In addition to this morphological anisotropy, due to the dominantly hexagonal grain structure, the Ti-6A1-4V alloy also exhibited a substantial thermoelectric anisotropy. This study was conducted to investigate the effect of thermoelectric anisotropy on the thermoelectric power measurements in a highly textured Ti-6A1-4V specimen using a completely nondestructive technique based on the Seebeck effect. The result shows the thermoelectric power dependence associated with texturing and the macroscopic grain structure in a rolled Ti-6A1-4V specimen, which was annealed at 710°C for 2 hours and slowly cooled. The measurements clearly demonstrated that the intrinsic sensitivity of the thermoelectric contact technique is a very useful tool that could be exploited for quantitative nondestructive (QND) material characterization.

Author(s):  
Brian Ralph ◽  
Barlow Claire ◽  
Nicola Ecob

This brief review seeks to summarize some of the main property changes which may be induced by altering the grain structure of materials. Where appropriate an interpretation is given of these changes in terms of current theories of grain boundary structure, and some examples from current studies are presented at the end of this paper.


Author(s):  
Jan Mock ◽  
Benjamin Klingebiel ◽  
Florian Köhler ◽  
Maurice Nuys ◽  
Jan Flohre ◽  
...  

2015 ◽  
Vol 45 (1) ◽  
pp. 307-311 ◽  
Author(s):  
Dariush Souri ◽  
Zahra Siahkali ◽  
Mohammad Moradi

2002 ◽  
Vol 14 (43) ◽  
pp. 10305-10316 ◽  
Author(s):  
Affia Aslam ◽  
S K Hasanain ◽  
M Zubair ◽  
M J Akhtar ◽  
M Nadeem

2009 ◽  
Vol 44 (16) ◽  
pp. 4499-4502 ◽  
Author(s):  
C. Capdevila ◽  
T. De Cock ◽  
F. G. Caballero ◽  
D. San Martin ◽  
C. Garcia de Andres

1989 ◽  
Vol 165 ◽  
Author(s):  
J. D. Chapple-Sokol ◽  
E. Tiemey ◽  
J. Batey

AbstractSilicon dioxide films deposited from the PECVD reaction of silane and nitrous oxide in the presence of helium were studied to determine the effects of RF power on the deposition process. Increased RF power density yielded oxides which were structurally and chemically more homogeneous. The combination of elevated power density with increased silane concentration resulted in the deposition of films of high electrical and physical integrity at high deposition rates.


1988 ◽  
Vol 1 (1) ◽  
pp. 53-61 ◽  
Author(s):  
B. Fisher ◽  
J. Genossar ◽  
I. O. Lelong ◽  
A. Kessel ◽  
J. Ashkenazi

Sign in / Sign up

Export Citation Format

Share Document