Design of an Organic Pixel Addressing Circuit for Active-Matrix OLED Displays

2008 ◽  
Author(s):  
Mohsen Purahmad ◽  
Iman Rezenejad Gatabi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Active Matrix ◽  
New Model ◽  
Simulation Results ◽  
Hspice Simulation

In this paper, we present a new model for an organic pixel addressing circuit based on four-transistor configuration. The proposed circuit doesn’t have the problems of regular configurations which are based on four-thin film transistors (TFT). Circuits based on four-TFT have many advantages, but the only problem is the existence of current peaks at the beginning of each pixel luminescence. Both 4-TFT based configuration and proposed one were simulated using HSPICE. Simulation results indicate the superiority of the proposed method compared with existing technique.

Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display

2020 ◽  
Vol 12 (4) ◽  
pp. 4749-4754 ◽  
Author(s):  
Hamin Park ◽  
Dong Sik Oh ◽  
Khang June Lee ◽  
Dae Yool Jung ◽  
Seunghee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Two Dimensional ◽  
Active Matrix ◽  
Two Dimensional Materials

scholarly journals An AMOLED Pixel Circuit Based on LTPS Thin-film Transistors with Mono-Type Scanning Driving

Electronics ◽  
2020 ◽  
Vol 9 (4) ◽  
pp. 574
Author(s):  
Jianyuan Ke ◽  
Lianwen Deng ◽  
Liying Zhen ◽  
Qing Wu ◽  
Congwei Liao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Light Emitting Diode ◽  
Monte Carlo Analysis ◽  
Internal Resistance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Ir Drop ◽  
Control Functions ◽  
Pixel Circuit

Using low-temperature poly-silicon thin-film transistors (LTPS TFTs) as a basis, a pixel circuit for an active matrix organic light-emitting diode (AMOLED) with narrow bezel displays was developed. The pixel circuit features mono-type scanning signals, elimination of static power lines, and pixel-integrated emitting control functions. Therefore, gate driver circuits of the display bezel can be simplified efficiently. In addition, the pixel circuit has a high-resolution design due to an increase of the pulse width of the scan signal to extend the threshold voltage and internal–resistance drop (IR drop) detection period. Further, regarding the influences of process–voltage–temperature (PVT) variation in the pixel circuit, comparison investigations were carried out with the proposed circuit and other pixel circuits with mono-type scanning signals using Monte Carlo analysis. The feasibility of the proposed pixel circuit is well demonstrated, as the current variations can be reduced to 2.1% for the supplied power reduced from 5 V to 3 V due to IR drop, and the current variation is as low as 10.6% with operating temperatures from –40 degrees to 85 degrees.

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