Rapid Intense Pulse Light Sintering of Copper Sulphide Nanoparticle Films

Copper sulphide (CuxS, x = 1 to 2) is a metal chalcogenide semiconductor that exhibits useful optical and electrical properties due to the presence of copper vacancies. This makes CuxS thin films useful for a number of applications including infrared absorbing coatings, solar cells, thin-film electronics, and as a precursor for CZTS (Copper Zinc Tin Sulphide) thin films. Post-deposition sintering of CuxS nanoparticle films is a key process that affects the film properties and hence determines its operational characteristics in the above applications. Intense pulse light (IPL) sintering uses visible broad-spectrum xenon light to rapidly sinter nanoparticle films over large-areas, and is compatible with methods such as roll-to-roll deposition for large-area deposition of colloidal nanoparticle films and patterns. This paper experimentally examines the effect of IPL parameters on sintering of CuxS thin films. As-deposited and sintered films are compared in terms of their crystal structure, as well as optical and electrical properties, as a function of the IPL parameters.

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Impact of silver dopants on structural, morphological, optical, and electrical properties of copper-zinc sulfide thin films prepared via sol-gel spin coating method

Optical Materials ◽

10.1016/j.optmat.2020.110250 ◽

2020 ◽

Vol 109 ◽

pp. 110250 ◽

Cited By ~ 1

Author(s):

Ahmed Asaad I. Khalil ◽

Al-Shimaa H.M. Abd El-Gawad ◽

A.-S. Gadallah

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Zinc Sulfide ◽

Spin Coating ◽

Sol Gel ◽

Optical And Electrical Properties ◽

Spin Coating Method ◽

Coating Method ◽

Copper Zinc

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Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

Nanoscale Reports ◽

10.26524/nr1815 ◽

2018 ◽

Vol 1 (1) ◽

pp. 26-31 ◽

Cited By ~ 1

Author(s):

B Babu ◽

K Mohanraj ◽

S Chandrasekar ◽

N Senthil Kumar ◽

B Mohanbabu

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Electrical Properties ◽

Gamma Radiation ◽

Glass Substrate ◽

Gamma Ray ◽

Optical And Electrical Properties ◽

Deposition Technique ◽

Polycrystalline Structure ◽

Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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Enhancing Optical and Electrical Properties of La- and Al-Codoped ZnO Thin Films Prepared by Sol-Gel Method -La Codoping Effect

Recent Patents on Nanotechnology ◽

10.2174/1872210510666160929115302 ◽

2017 ◽

Vol 11 (2) ◽

Author(s):

Hai -Yan He

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Zno Thin Films ◽

Optical And Electrical Properties ◽

Gel Method ◽

Sol Gel Method

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Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽

10.3390/ma14040766 ◽

2021 ◽

Vol 14 (4) ◽

pp. 766

Author(s):

Tihomir Car ◽

Ivan Jakovac ◽

Ivana Šarić ◽

Sigrid Bernstorff ◽

Maja Micetic

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Au Nanoparticle ◽

Content Increase ◽

Optical And Electrical Properties ◽

Volume Percentage ◽

Sputtering Deposition ◽

Nanoparticle Formation ◽

Al Content ◽

Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

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