Preparation of site specific transmission electron microscopy plan-view specimens using a focused ion beam system

Author(s):  
R. M. Langford ◽  
Y. Z. Huang ◽  
S. Lozano-Perez ◽  
J. M. Titchmarsh ◽  
A. K. Petford-Long
2009 ◽  
Vol 15 (6) ◽  
pp. 558-563 ◽  
Author(s):  
Herman Carlo Floresca ◽  
Jangbae Jeon ◽  
Jinguo G. Wang ◽  
Moon J. Kim

AbstractWe have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then “folded out” from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.


2012 ◽  
Vol 180 (3) ◽  
pp. 572-576 ◽  
Author(s):  
Stefano Rubino ◽  
Sultan Akhtar ◽  
Petter Melin ◽  
Andrew Searle ◽  
Paul Spellward ◽  
...  

1997 ◽  
Vol 3 (S2) ◽  
pp. 347-348
Author(s):  
L.A. Giannuzzi ◽  
J.L. Drownt ◽  
S.R. Brown ◽  
R.B. Irwin ◽  
F.A. Stevie

It has been shown that a focused ion beam (FIB) instrument may be used to prepare site specific cross-sectioned specimens to within < 0.1 μm for both scanning and transmission electron microscopy (SEM and TEM, respectively). FIB specimen preparation has been used almost exclusively in the microelectronics industry. Recently, FIB specimen preparation has been utilized for other materials systems and applications.A cross-sectioned SEM specimen is produced by sputtering away a trench of material from near the region of interest. Large amounts of material are sputtered using large ion beam diameters (e.g., l00’s nm) and high beam current (e.g., l000’s pA), while the final sputtering operations are achieved using smaller beam diameters (e.g., < 10 nm) and lower beam current (e.g., 10’s of pA). The SEM specimen may then be etched to reveal particular microstructural features of interest. A low magnification SEM image of a multi-layered device prepared for cross-section analysis by the FIB method is shown in FIG. 1.


2000 ◽  
Vol 6 (S2) ◽  
pp. 510-511 ◽  
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
T. Ohnishi ◽  
K. Umemura ◽  
S. Tomimatsu

The focused ion beam(FIB) technique, developed for the microelectronics industry has become a major method for site specific transmission electron microscopy(TEM) specimen preparation in a wide range of materials[l]. The FIB lift-out technique has improved the specimen preparation procedures by removing complicated initial fabrication required prior to the FIB milling[2]. However, conventional FIB techniques are still having increased difficulty in meeting failure analysis needs from high technology industries such as microelectronics.We have developed a site specific TEM specimen preparation method using a combination of an FIB instrument and an intermediate voltage TEM equipped with a scanning attachment [3]. In this method, the specimen is mounted on an FIB-TEM compatible specimen holder, so that localization of the specific site can be carried out in the FIB and TEM using the same holder. The scanning electron imaging mode may be used to observe surface structures of the milled area, and the scanning transmission electron microscopy(STEM) mode may be used to observe structures inside of the milled surface.


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