Plan-view observation of crack tips by focused ion beam/transmission electron microscopy

1997 ◽  
Vol 234-236 ◽  
pp. 552-554 ◽  
Author(s):  
H. Saka ◽  
S. Abe
2014 ◽  
Vol 20 (5) ◽  
pp. 1585-1590
Author(s):  
Eva Grieten ◽  
Joost Caen ◽  
Dominique Schryvers

AbstractAn alternative focused ion beam preparation method is used for sampling historical photographs containing metallic nanoparticles in a polymer matrix. We use the preparation steps of classical ultra-microtomy with an alternative final sectioning with a focused ion beam. Transmission electron microscopy techniques show that the lamella has a uniform thickness, which is an important factor for analytical transmission electron microscopy. Furthermore, the method maintains the spatial distribution of nanoparticles in the soft matrix. The results are compared with traditional preparation techniques such as ultra-microtomy and classical focused ion beam milling.


2006 ◽  
Vol 965 ◽  
Author(s):  
Yifang Cao ◽  
Nan Yao ◽  
Kevin McIlwrath ◽  
Jikou Zhou ◽  
Gabriel Osinkolu ◽  
...  

ABSTRACTThis paper reports the recent results of a transmission electron microscopy study of cold-welded and e-beam deposited Au-Ag interfaces. Dust particles were observed to be embedded between the cold-welded interfaces. These are shown to amplify the defect regions caused by surface asperities. Electron energy loss spectroscopy (EELS) analysis revealed that there was no significant diffusion zone across the cold welding interface. However, sub-micron mechanical twining structures were revealed by transmission electron microscopy (TEM) analyses. These were found to penetrate through both the cold-welded and control Au-Ag interfaces, but with different orientations.


2009 ◽  
Vol 15 (6) ◽  
pp. 558-563 ◽  
Author(s):  
Herman Carlo Floresca ◽  
Jangbae Jeon ◽  
Jinguo G. Wang ◽  
Moon J. Kim

AbstractWe have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then “folded out” from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.


Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.


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