Method to enhance atomic-layer deposition of tungsten–nitride diffusion barrier for Cu interconnect

2003 ◽  
Vol 21 (4) ◽  
pp. 1411 ◽  
Author(s):  
Hyun Sang Sim ◽  
Seong-Il Kim ◽  
Yong Tae Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Tungsten Nitride ◽  
Layer Deposition ◽  
Cu Interconnect

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Some Insights into Atomic Layer Deposition of MoNx Using Mo(CO)6 and NH3 and Its Diffusion Barrier Application

2019 ◽  
Vol 31 (20) ◽  
pp. 8338-8350 ◽  
Author(s):  
Tae Hyun Kim ◽  
Dip K. Nandi ◽  
Rahul Ramesh ◽  
Seung-Min Han ◽  
Bonggeun Shong ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition
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