scholarly journals Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films

2006 ◽  
Vol 24 (3) ◽  
pp. 1327 ◽  
Author(s):  
Jin-Seong Park ◽  
Sang-Won Kang ◽  
H. Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Property ◽  
Layer Deposition ◽  
And Diffusion

A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon–tin oxide by atomic layer deposition

2021 ◽  
Author(s):  
Ju-Hwan Han ◽  
Dong-Yeon Kim ◽  
Seunghwan Lee ◽  
Hae Lin Yang ◽  
Byung Ho Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Tin Oxide ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Gas Diffusion ◽  
Barrier Property ◽  
Layer Deposition

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 11 (1) ◽  
pp. 671-674 ◽  
Author(s):  
Seong-Jun Jeong ◽  
Doo-In Kim ◽  
Sang Ouk Kim ◽  
Tae Hee Han ◽  
Jung-Dae Kwon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Layer Deposition

Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

2012 ◽  
Vol 329 ◽  
pp. 159-164 ◽  
Author(s):  
Rosniza Hussin ◽  
Xiang Hui Hou ◽  
Kwang Leong Choy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Semiconductor Industry ◽  
Hexagonal Wurtzite Structure ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier

2019 ◽  
Vol 685 ◽  
pp. 393-401 ◽  
Author(s):  
Jun Beom Kim ◽  
Dip K. Nandi ◽  
Tae Hyun Kim ◽  
Yujin Jang ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Organic Precursor ◽  
Layer Deposition ◽  
Metal Organic ◽  
Cu Diffusion Barrier ◽  
Tungsten Metal

Atomic layer deposition on polymer based flexible packaging materials: Growth characteristics and diffusion barrier properties

2011 ◽  
Vol 519 (10) ◽  
pp. 3146-3154 ◽  
Author(s):  
Tommi O. Kääriäinen ◽  
Philipp Maydannik ◽  
David C. Cameron ◽  
Kimmo Lahtinen ◽  
Petri Johansson ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Growth Characteristics ◽  
Packaging Materials ◽  
Layer Deposition ◽  
Flexible Packaging ◽  
And Diffusion

The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Kim ◽  
C. Cabral ◽  
C. Lavoie ◽  
S.M. Rossnagel
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Growth Parameters ◽  
Atomic Layer ◽  
Barrier Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Layer Deposition

AbstractTa films were grown by plasma-enhanced atomic layer deposition (PE-ALD) at temperatures from room temperature up to 300 °C using TaCl5 as source gas and RF plasma-produced atomic H as the reducing agent. Post-deposition ex situ chemical analyses showed that the main impurity is oxygen, incorporated during the air exposure prior to analysis with typically low Cl concentration below 1 at %. The X-ray diffraction indicates that ALD Ta films are amorphous or composed of nano-grains. The typical resistivity of ALD Ta films was 150-180 μΩ cm, which corresponds to that of β-Ta phase, at a wide range of growth parameters. The conformality of the film is 100 % up to an aspect ratio of 15:1 and 40 % for aspect ratio of 40:1. The thickness per cycle, corresponding to the growth rate, was measured by Rutherford back scattering as a function of various key growth parameters, including TaCl5 and H exposure time and growth temperature. The maximum thickness per cycle values were below 0.1 ML, probably due to the steric hindrance for TaCl5 adsorption. Bilayer structures consisting of Cu films deposited by sputtering and ALD Ta films with various thicknesses were prepared and the diffusion barrier properties of ALD Ta films were investigated by various analysis techniques consisting of X-ray diffraction, elastic light scattering, and resistance analysis. The results were compared with Ta thin films deposited by sputtering with comparable thicknesses. Also, the growth of TaN films by PE-ALD using consecutive exposures of atomic H and activated N2 is presented.

Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant

2017 ◽  
Vol 17 (3) ◽  
pp. 333-338 ◽  
Author(s):  
Il-Kwon Oh ◽  
Hyungjun Kim ◽  
Han-Bo-Ram Lee
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Atomic Layer ◽  
Layer Deposition
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