scholarly journals AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

2016 ◽  
Vol 119 (20) ◽  
pp. 204101 ◽  
Author(s):  
Y. Guo ◽  
H. Li ◽  
J. Robertson
Keyword(s):  
Gate Dielectrics ◽  
Gate Stacks

High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

2002 ◽  
Vol 745 ◽  
Author(s):  
J. Raynien Kwo ◽  
Minghwei Hong
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectrics ◽  
Compound Semiconductors ◽  
State Density ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Materials Integration ◽  
Cmos Scaling ◽  
Atomic Precision ◽  
Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

Vt Variation Suppressed Al2O3-Capped HfO2 Gate Dielectrics for Low Vt pMISFETs with High-k/Metal Gate Stacks

2008 ◽  
Author(s):  
T. Morooka ◽  
T. Matsuki ◽  
N. Mise ◽  
S. Kamiyama ◽  
T. Nabatame ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

Thermal stability of advanced gate stacks consisting of a Ru electrode and Hf-based gate dielectrics for CMOS technology

Vacuum ◽  
2007 ◽  
Vol 81 (10) ◽  
pp. 1379-1384 ◽  
Author(s):  
D. Machajdík ◽  
A.P. Kobzev ◽  
K. Hušeková ◽  
M. Ťapajna ◽  
K. Fro˝hlich ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectrics ◽  
Cmos Technology ◽  
Gate Stacks ◽  
Thermal Stability Of

Impact of Galvanic Corrosion on Metal Gate Stacks

2009 ◽  
Vol 145-146 ◽  
pp. 215-218
Author(s):  
Masayuki Wada ◽  
Sylvain Garaud ◽  
I. Ferain ◽  
Nadine Collaert ◽  
Kenichi Sano ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Galvanic Corrosion ◽  
Gate Stacks ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Gate Electrodes ◽  
High K ◽  
Work Functions

High-k gate dielectrics (HK), such as HfO2 or HfSiON, are being considered as the gate dielectric option for the 45nm node and beyond. In order to alleviate the Fermi-level pinning issue and to enhance the CET (Capacitive Effective Thickness) by generating the depletion layer in poly-Silicon gate, metal gate electrodes with proper work functions (WF) have to be used on the high-k dielectrics.

Investigating the Interfacial Properties of Hf-based/Si and SiO2/Si Gate Stacks

2009 ◽  
Vol 1155 ◽  
Author(s):  
Shiang Yu Tan
Keyword(s):  
Leakage Current ◽  
Photoelectron Spectroscopy ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
Complementary Metal Oxide Semiconductor ◽  
Interfacial Properties ◽  
Oxide Semiconductor ◽  
Superior Performance ◽  
Gate Stacks ◽  
Interface Charges

AbstractAs complementary metal–oxide–semiconductor (CMOS) devices are scaled down into nano-region, SiO2 dielectric is approaching its physical and electrical limits. Hafnium based oxides are the most promising materials as a replacement for conventional gate dielectrics, due to its much higher dielectric constant (high-k) and stability. The aims of work were to investigate the interface-related issues associating with Hf-based/Si and SiO2/Si gate stacks. The interfacial properties of dielectric oxide/Si were studied by stacking a different dielectric layer (SiO2, HfSiO, and HfO2) on Si substrate. We studied the electrical behavior of dielectric oxide/Si interface by leakage current density-voltage (J-V) and capacitance-voltage (C-V) measurement techniques. The effects of the post-deposition annealing (PDA) treatment on the interface charges of dielectric oxides were presented. We found that the PDA can effectively reduce trapping density and the leakage current, and eliminate hysteresis in the C–V curves. The X-ray photoelectron spectroscopy (XPS) was applied for studying the surface chemical bonding energy at different gate stack structures. The XPS analysis provides a better interpretation of the electrical property. As results, HfSiO films have exhibited a superior performance in terms of thermal stability and electrical characteristics.

Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation

2014 ◽  
Vol 2 (27) ◽  
pp. 5299-5308 ◽  
Author(s):  
Gang He ◽  
Jiangwei Liu ◽  
Hanshuang Chen ◽  
Yanmei Liu ◽  
Zhaoqi Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Band Alignment ◽  
Photoemission Spectroscopy ◽  
Gate Stacks ◽  
Electrical Measurements ◽  
Interface Control ◽  
Nitrogen Incorporation ◽  
Gaas Substrates ◽  
Optical Dielectric

Effects of nitrogen incorporation on the interface chemical bonding states, optical dielectric function, band alignment, and electrical properties of sputtering-derived HfTiO high-kgate dielectrics on GaAs substrates have been studied by angle resolved X-ray photoemission spectroscopy (ARXPS), spectroscopy ellipsometry (SE), and electrical measurements.

Thermally Grown and Reoxidized Nitrides as Alternative Gate Dielectrics

2003 ◽  
Vol 786 ◽  
Author(s):  
Alexandra Ludsteck ◽  
Waltraud Dietl ◽  
Hinyiu Chung ◽  
Joerg Schulze ◽  
Zsolt Nenyei ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Interface State ◽  
Boron Diffusion ◽  
Gate Stacks ◽  
Process Gas ◽  
High K ◽  
Current Densities ◽  
High K Materials ◽  
Thermal Nitridation

ABSTRACTThe use of high-k materials as gate dielectric still meets a lot of unsolved problems such as thermal instability during post deposition anneals resulting in the formation of interfacial oxide layers or bad process compatibility. As long as these requirements are not accomplished alternative gate dielectrics have to be formed by oxynitrides or gate stacks built of oxynitrides and some high-k material. In order to achieve a low equivalent oxide thickness (EOT) it is necessary to grow homogeneously thin oxynitrides which are nitrogen-rich and which have a high interface quality. Therefore we have studied the growth of thin nitrides and oxynitrides (EOT = 1 – 2nm) formed by rapid thermal nitridation in NH3 and wet reoxidation. By varying the partial pressure of NH3 in the process gas ambient NH3/Ar the nitride quality could be optimized: it was found that an optimized ratio of NH3 and Ar during nitridation improves the electrical properties of the nitrides and oxynitrides significantly. Interface state densities as low as those of dry thermal oxides and leakage current densities reduced by four orders of magnitude compared to SiO2 of the same EOT have been obtained. Due to the high incorporation of nitrogen into the oxynitride by rapid thermal nitridation and following oxidation the leakage current densities are also lower than those of most oxynitrides reported in literature. In addition we present data concerning the suppression of boron diffusion from p+ poly-Si electrodes. In summary the developed oxynitrides are suitable to bridge the gap between common SiO2 and new alternative gate dielectrics or to form gate stacks in combination with high-k materials.

High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy

2002 ◽  
Vol 747 ◽  
Author(s):  
J. Raynien Kwo ◽  
Minghwei Hong
Keyword(s):  
Physical Vapor Deposition ◽  
Gate Dielectrics ◽  
Compound Semiconductors ◽  
State Density ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Materials Integration ◽  
Cmos Scaling ◽  
Atomic Precision ◽  
Critical Issues

ABSTRACTThe ability of controlling the growth and interfaces of ultrathin dielectric films on Si and compound semiconductors by ultrahigh vacuum physical vapor deposition has led to comprehensive studies of gate stacks employing the high κ gate oxide Ga2O3(Gd2O3), and the rare earth oxides Gd2O3 and Y2O3. The epitaxy and the interfaces of Gd2O3 on GaAs, GaN, and Si were characterized with atomic precision, and show strong tendency to conform to the underlying substrate, thus providing insight into the fundamental mechanism for low interfacial state density and effective passivation of GaAs and GaN surfaces. These Gd2O3 and Y2O3 gate stacks of abrupt interfaces and controlled microstructures were employed as a model system to elucidate critical issues of materials integration in CMOS scaling.

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