Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Gate Oxide ◽

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Dual Gate

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Stress Engineering

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

High Permittivity

Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Dry Etching ◽

Oxide Semiconductor ◽

Gate Stack

Complementary metal-oxide semiconductor-compatible silicon carbide pressure sensors based on bulk micromachining

Micro & Nano Letters ◽

10.1049/mnl.2011.0084 ◽

2011 ◽

Vol 6 (4) ◽

pp. 265 ◽

Cited By ~ 9

Author(s):

Wei Tang ◽

Baixiang Zheng ◽

Lei Liu ◽

Zhe Chen ◽

Haixia Zhang

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Pressure Sensors ◽

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Intra-Level Mix-and-Match Lithography Process for Fabricating Sub-100-nm Complementary Metal-Oxide-Semiconductor Devices using the JBX-9300FS Point-Electron-Beam System

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6843 ◽

2000 ◽

Vol 39 (Part 1, No. 12B) ◽

pp. 6843-6848 ◽

Cited By ~ 3

Author(s):

Mitsuru Narihiro ◽

Hitoshi Wakabayashi ◽

Makoto Ueki ◽

Kohichi Arai ◽

Takashi Ogura ◽

...

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Lithography Process ◽

Beam System ◽

Mix And Match

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Etching of TiN-based gates for advanced complementary metal-oxide-semiconductor devices

10.1116/1.2953732 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1440 ◽

Cited By ~ 2

Author(s):

V. Bliznetsov ◽

N. Singh ◽

R. Kumar ◽

N. Balasubramanian ◽

P. Guo ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4913832 ◽

2015 ◽

Vol 117 (11) ◽

pp. 112806 ◽

Cited By ~ 57

Author(s):

J. Robertson ◽

Y. Guo ◽

L. Lin

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Defect State ◽

Oxide Interfaces ◽

At Iii

Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4816090 ◽

2013 ◽

Vol 114 (3) ◽

pp. 034505 ◽

Cited By ~ 12

Author(s):

R. K. Pandey ◽

Rajesh Sathiyanarayanan ◽

Unoh Kwon ◽

Vijay Narayanan ◽

K. V. R. M. Murali

Keyword(s):

Metal Oxide ◽

Work Function ◽

Point Defects ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Effective Work ◽

Effective Work Function