Ferroelectric Polarization Switching Behavior of Hf
0.5
Zr
0.5
O
2
Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures
2019 ◽
Vol 217
(7)
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pp. 1900717
Chunlei Wu
◽
Hansheng Ye
◽
Benjamin Grisafe
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Suman Datta
◽
Patrick Fay
Dao Dinh Ha
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Trung Tran Tuan
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Vladislav Volcheck
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Viktor Stempitsky
2010 ◽
Vol 4
(1)
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pp. 171-179
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Byung Hwan Chu
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Byoung Sam Kang
◽
Sheng Chun Hung
◽
Ke Hung Chen
◽
Fan Ren
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...
2021 ◽
Vol 36
(4)
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pp. 045019
Samriddhi Raut
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Khushwant Sehra
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Meena Mishra
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D S Rawal
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Mridula Gupta
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...
Kai‐Jun Pai
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Chang‐Hua Lin
2011 ◽
Vol 29
(1)
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pp. 01A808
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K. Čičo
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K. Hušeková
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M. Ťapajna
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D. Gregušová
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R. Stoklas
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...
2016 ◽
Vol 10
(5)
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pp. 423-432
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Kanjalochan Jena
◽
Raghunandan Swain
◽
Trupti Ranjan Lenka
Khizar Hayat
◽
Salahuddin Zafar
◽
Tariq Mehmood
◽
Busra Cankaya Akoglu
◽
Ekmel Ozbay
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...
2017 ◽
Vol 66
(24)
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pp. 247203
Zhu Yan-Xu
◽
Song Hui-Hui
◽
Wang Yue-Hua
◽
Li Lai-Long
◽
Shi Dong
Jong‐Heon Kim
◽
Dong‐Ki Jeong
◽
Ji‐Yeon Kim
◽
Young‐Rak Choi
2019 ◽
Vol 14
(7)
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pp. 1091-1094
Nan‐Hung Cheng
◽
Yung‐Fang Chen
◽
Liann‐Be Chang
◽
Ping‐Yu Kuei
◽
Yi‐Cherng Ferng
◽
...