Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy

2011 ◽  
Vol 29 (3) ◽  
pp. 032202 ◽  
Author(s):  
Jun Zhu ◽  
Jing Jing ◽  
Wenbo Luo ◽  
Yin Zhang ◽  
Yanrong Li
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Pulse Laser ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Laser Molecular Beam Epitaxy

Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10386-10394 ◽  
Author(s):  
Md. Shafiqur Rahman ◽  
Susmita Ghose ◽  
Liang Hong ◽  
Pradip Dhungana ◽  
Abbas Fahami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Multiferroic Films

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

Epitaxial Growth of C60 Thin Films using Continuous-wave Laser Molecular Beam Epitaxy

2006 ◽  
Vol 965 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Masamitsu Haemori ◽  
Masao Katayama ◽  
Yuji Matsumoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Continuous Wave ◽  
High Energy ◽  
Imaging Plate ◽  
Continuous Wave Laser ◽  
Laser Molecular Beam Epitaxy ◽  
Wave Laser

ABSTRACTWe have fabricated C60 thin films on various substrates (mica, MoS2, HOPG, LiF, NaCl, KBr, KCl and CaF2) by using continuous-wave laser molecular beam epitaxy (CWL-MBE), which is very suitable technique to grow epitaxial organic thin films because of good controllability of evaporation as compared with Knudsen-cell method. The films were evaluated by reflection high-energy electron diffraction with micro channel imaging plate (MCP-RHEED) and atomic force microscopy (AFM). AFM images of the C60 films on mica, MoS2 and HOPG substrates show flat and homogeneous, morphology, and epitaxial growth of the films on mica and MoS2 substrates were observed by RHEED. This result shows mica, MoS2, HOPG substrates are good candidates for epitaxial growth of C60 thin films.

Epitaxial growth of GaN films on Cr-compound buffer layers by plasma assisted molecular beam epitaxy

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2013-2015 ◽  
Author(s):  
Jinsub Park ◽  
Wook Hyun Lee ◽  
Seog Woo Lee ◽  
Jun-Seok Ha ◽  
Meoung Whan Cho ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Buffer Layers

scholarly journals Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (11) ◽  
pp. 115216 ◽  
Author(s):  
Hongling Wei ◽  
Zhengwei Chen ◽  
Zhenping Wu ◽  
Wei Cui ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy

Epitaxial growth of SrTiO3 thin film on Si by laser molecular beam epitaxy

2007 ◽  
Vol 90 (1) ◽  
pp. 012902 ◽  
Author(s):  
X. Y. Zhou ◽  
J. Miao ◽  
J. Y. Dai ◽  
H. L. W. Chan ◽  
C. L. Choy ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy
Sign in / Sign up

Export Citation Format

Share Document