Survey of low temperature rf plasma polymerization and processing

1976 ◽  
Vol 13 (2) ◽  
pp. 575-584 ◽  
Author(s):  
M. R. Havens ◽  
M. E. Biolsi ◽  
K. G. Mayhan
Keyword(s):  
Low Temperature ◽  
Plasma Polymerization ◽  
Rf Plasma

Enhancement of IR transparency of arsenic sulfide materials via plasma-chemical conversion of the initial arsenic monosulfide in low-temperature RF plasma

2018 ◽  
Vol 52 (1) ◽  
pp. 015203 ◽  
Author(s):  
Leonid Mochalov ◽  
Alexander Logunov ◽  
Roman Kornev ◽  
Sergey Zelentsov ◽  
Andrey Vorotyntsev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Chemical Conversion ◽  
Rf Plasma ◽  
Arsenic Sulfide ◽  
Plasma Chemical

Plasma Surface Modification of Silica and its Application in Epoxy Molding Compounds for Large-Scale Integrated Circuits Packaging

2010 ◽  
Vol 158 ◽  
pp. 184-188 ◽  
Author(s):  
Ming Shan Yang ◽  
Lin Kai Li ◽  
Jian Guo Zhang
Keyword(s):  
Surface Modification ◽  
Acrylic Acid ◽  
Integrated Circuits ◽  
Plasma Polymerization ◽  
High Speed ◽  
Large Scale ◽  
Treatment Time ◽  
Rf Plasma ◽  
Formaldehyde Resin ◽  
Molding Compounds

The surface modification of silica for epoxy molding compounds (EMC) was conducted by plasma polymerization using RF plasma (13.56MPa), and the modification factors such as plasma power, gas pressure and treatment time were investigated systematically in this paper. The monomers utilized for the plasma polymer coatings were pyrrole, 1,3-diaminopropane, acrylic acid and urea. The plasma polymerization coating of silica was characterized by FTIR, contact angle. Using the silica treated by plasma as filler, ortho-cresol novolac epoxy as main resin, novolac phenolic-formaldehyde resin as cross-linking agent and 2-methylmizole as curing accelerating agent, the EMCs used for the packaging of large-scale integrated circuits were prepared by high-speed pre-mixture and twin roller mixing technology. The results have shown that the surface of silica can be coated by plasma polymerization of pyrrole, 1,3-diaminopropane, acrylic acid and urea, and the comprehensive properties of EMC were improved.

Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs

2019 ◽  
Vol 8 (2) ◽  
pp. Q24-Q31
Author(s):  
Y. V. Gomeniuk ◽  
Y. Y. Gomeniuk ◽  
T. E. Rudenko ◽  
P. N. Okholin ◽  
V. I. Glotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Rf Plasma
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