Abstract: Effect of lattice‐mismatch stress on the energy band gap and latice parameter of III‐V heteroepitaxial layers

1978 ◽  
Vol 15 (4) ◽  
pp. 1470-1470 ◽  
Author(s):  
G. H. Olsen ◽  
C. J. Nuese ◽  
R. T. Smith
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Lattice Mismatch ◽  
Energy Band Gap ◽  
Mismatch Stress ◽  
Heteroepitaxial Layers

Energy band-gap in elastic-strained heteroepitaxial layers

1985 ◽  
Vol 20 (10) ◽  
pp. 1381-1386 ◽  
Author(s):  
S. G. Konnikov ◽  
V. E. Umansky
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap ◽  
Heteroepitaxial Layers

Optical Properties of Pseudomorphic SnXGe1−x Alloys

1999 ◽  
Vol 588 ◽  
Author(s):  
Regina Ragan ◽  
Harry A. Atwater
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Growth Direction ◽  
Biaxial Compression ◽  
Energy Band Gap ◽  
Uniaxial Elongation ◽  
Transmission Measurements ◽  
Deformation Potential Theory

AbstractSnxGe1−x alloys are grown coherent on Ge(001) substrates by conventional molecular beam epitaxy. The lattice mismatch between SnxGe1−x and Ge produces a biaxial compression of the alloy in the plane of the substrate and a uniaxial elongation in the growth direction. The change of Eg resulting from the biaxial compression is modeled with deformation potential theory for coherent SnxGe1−x on Ge(001) and coherent SnxGe1−x on Ge(111). For SnxGe1−x on Ge(001), the decrease in the energy band gap due to strain is small, 16 meV for x = 0.10, and Γ7 and L6 shift uniformly. In the case of SnxGe1−x on Ge(111), Γ7 and L6 do not shift uniformly; a large uniaxial splitting occurs at L6, 200 meV for x = 0.10. Another interesting result of a uniaxial strain along [111] is the absence of a direct to indirect energy band gap transition for x < 0.30. Fourier transform infrared spectroscopy transmission measurements of coherent SnxGe1−x on Ge(001) confirm the strain-induced change in the energy band gap is a small effect.

Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

2009 ◽  
Vol 610-613 ◽  
pp. 598-603
Author(s):  
Lan Zhao ◽  
Zheng Xiong Lu ◽  
Cai Jing Cheng ◽  
De Gang Zhao ◽  
Jian Jun Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Lattice Strain ◽  
Energy Gap ◽  
Lattice Mismatch ◽  
Lattice Relaxation ◽  
Epitaxial Thin Films ◽  
Energy Band Gap ◽  
Bowing Parameter

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

scholarly journals No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1512
Author(s):  
Changho Seo ◽  
Seongsoo Cho ◽  
Je Huan Koo
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

Energy Band Gap Studies of CdS Nanomaterials

2008 ◽  
Vol 3 ◽  
pp. 97-102 ◽  
Author(s):  
Dinu Patidar ◽  
K.S. Rathore ◽  
N.S. Saxena ◽  
Kananbala Sharma ◽  
T.P. Sharma
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Chemical Method ◽  
Optical Absorption Spectroscopy ◽  
Cds Nanoparticles ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

Tailoring energy band gap and optical absorption of Cd doped MnTe2

2020 ◽  
pp. 111059
Author(s):  
B. Thapa ◽  
P.K. Patra ◽  
Sandeep Puri ◽  
K. Neupane ◽  
A. Shankar
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

Energy band gap of the alloy Zn1−xMgxSeyTe1−y lattice matched to ZnTe, InAs and InP

2000 ◽  
Vol 214-215 ◽  
pp. 350-354 ◽  
Author(s):  
Kyurhee Shim ◽  
Herschel Rabitz ◽  
Ji-Ho Chang ◽  
Takafumi Yao
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap ◽  
Lattice Matched
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