Investigation of GaAs field‐effect transistor interfaces using pulsed electron beam excitation

Journal of Vacuum Science and Technology ◽

10.1116/1.571679 ◽

1982 ◽

Vol 21 (2) ◽

pp. 463-466

Author(s):

L. D. Flesner ◽

A. K. Nedoluha ◽

H. H. Wieder

Keyword(s):

Electron Beam ◽

Field Effect ◽

Field Effect Transistor ◽

Pulsed Electron Beam ◽

Electron Beam Excitation ◽

Effect Transistor ◽

Beam Excitation

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High speed response of a GaAs metal‐semiconductor field‐effect transistor to electron‐beam excitation

Journal of Applied Physics ◽

10.1063/1.331087 ◽

1982 ◽

Vol 53 (5) ◽

pp. 3873-3877 ◽

Author(s):

L. D. Flesner ◽

N. M. Davis ◽

H. H. Wieder

Keyword(s):

Electron Beam ◽

Field Effect ◽

Field Effect Transistor ◽

Electron Beam Excitation ◽

Effect Transistor ◽

Beam Excitation ◽

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Direct-current and radio-frequency characterization of submicron striped-channel field effect transistor structures using focused ion beam and electron-beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585948 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2945 ◽

Author(s):

M. M. Hashemi

Keyword(s):

Electron Beam ◽

Radio Frequency ◽

Direct Current ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistor ◽

Focused Ion Beam ◽

Ion Beam ◽

Effect Transistor

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Thermally stimulated current measurements induced by pulsed electron beam excitation

Semiconductor Science and Technology ◽

10.1088/0268-1242/14/4/008 ◽

1999 ◽

Vol 14 (4) ◽

pp. 331-334 ◽

Author(s):

J P Ponpon ◽

R Stuck

Keyword(s):

Electron Beam ◽

Thermally Stimulated Current ◽

Pulsed Electron Beam ◽

Electron Beam Excitation ◽

Beam Excitation

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Hybrid lithography of a focused ion beam and an electron beam for the fabrication of a GaAs field effect transistor with a mushroom gate

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584162 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1828 ◽

Author(s):

K. Hosono

Keyword(s):

Electron Beam ◽

Field Effect ◽

Field Effect Transistor ◽

Focused Ion Beam ◽

Ion Beam ◽

Effect Transistor

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The u.v. and visible emission bands of CF3 radicals produced by pulsed electron beam excitation

International Journal of Radiation Applications and Instrumentation Part C Radiation Physics and Chemistry ◽

10.1016/1359-0197(89)90246-4 ◽

1989 ◽

Vol 34 (3) ◽

pp. 369-374

Author(s):

R. Hermann

Keyword(s):

Electron Beam ◽

Visible Emission ◽

Pulsed Electron Beam ◽

Electron Beam Excitation ◽

Beam Excitation

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Relaxation of electronic excitations in K2GeF6 studied by means of time-resolved luminescence spectroscopy under VUV and pulsed electron beam excitation

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.160916 ◽

2021 ◽

pp. 160916

Author(s):

Juhan Saaring ◽

Alexander Vanetsev ◽

Kirill Chernenko ◽

Eduard Feldbach ◽

Irina Kudryavtseva ◽

...

Keyword(s):

Electron Beam ◽

Luminescence Spectroscopy ◽

Electronic Excitations ◽

Time Resolved ◽

Pulsed Electron Beam ◽

Electron Beam Excitation ◽

Beam Excitation

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The formation of emitting CF3 and CF2 radical states by pulsed electron beam excitation

International Journal of Radiation Applications and Instrumentation Part C Radiation Physics and Chemistry ◽

10.1016/1359-0197(90)90248-g ◽

1990 ◽

Vol 36 (2) ◽

pp. 227-231

Author(s):

R. Hermann

Keyword(s):

Electron Beam ◽

Pulsed Electron Beam ◽

Electron Beam Excitation ◽

Beam Excitation

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Submicron modulation-doped field-effect transistor/metal–semiconductor–metal-based optoelectronic integrated circuit receiver fabricated by direct-write electron-beam lithography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585946 ◽

1992 ◽

Vol 10 (6) ◽

pp. 2936 ◽

Author(s):

A. Ketterson

Keyword(s):

Electron Beam ◽

Integrated Circuit ◽

Electron Beam Lithography ◽

Field Effect ◽

Field Effect Transistor ◽

Direct Write ◽

Metal Semiconductor Metal ◽

Effect Transistor

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Electron beam fabricated 0.5 µm gate GaAs Schottky-barrier field effect transistor

10.1109/iedm.1974.188799 ◽

1974 ◽

Author(s):

F.S. Ozdemir ◽

G.O. Ladd ◽

E.D. Wolf ◽

W.E. Perkins ◽

N. Hirsch ◽

...

Keyword(s):

Electron Beam ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Observation of leakage sites in a hafnium silicon oxynitride gate dielectric of a metal-oxide-semiconductor field-effect transistor device by electron-beam-induced current

Applied Physics Letters ◽

10.1063/1.2392988 ◽

2006 ◽

Vol 89 (22) ◽

pp. 222104 ◽

Author(s):

J. Chen ◽

T. Sekiguchi ◽

N. Fukata ◽

M. Takase ◽

T. Chikyow ◽

...

Keyword(s):

Electron Beam ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Silicon Oxynitride ◽

Oxide Semiconductor ◽

Induced Current ◽

Electron Beam Induced Current ◽

Effect Transistor

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