Initial adsorption kinetics of oxygen on a Cu0.82Li0.18 alloy surface studied by combined Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and time‐of‐flight spectrometry of direct recoils

1987 ◽  
Vol 5 (4) ◽  
pp. 1136-1141 ◽  
Author(s):  
M. H. Mintz ◽  
U. Atzmony ◽  
J. A. Schultz ◽  
N. Shamir
Keyword(s):  
Auger Electron Spectroscopy ◽  
Adsorption Kinetics ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Time Of Flight ◽  
Alloy Surface ◽  
X Ray ◽  
Initial Adsorption ◽  
Kinetics Of

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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