scholarly journals Surface oxidation kinetics of SiC powders in wet and dry air studied by x-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy

2003 ◽  
Vol 35 (10) ◽  
pp. 773-778 ◽  
Author(s):  
Thomas N. Wittberg ◽  
Pu Sen Wang ◽  
Stephen M. Hsu
1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.


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