Summary Abstract: X‐ray photoelectron spectroscopy, temperature programmed desorption, and Auger electron spectroscopy investigation of the interaction of [Rh(CO)2Cl]2 with oxidized Al(100)

1988 ◽  
Vol 6 (3) ◽  
pp. 859-860 ◽  
Author(s):  
David N. Belton ◽  
Steven J. Schmieg
Keyword(s):  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
X Ray ◽  
Temperature Programmed

Adsorption and Reaction of TiCl4 on W(100)

1993 ◽  
Vol 334 ◽  
Author(s):  
Wei Chen ◽  
Jeffrey T. Roberts
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Titanium Tetrachloride ◽  
Bound State ◽  
Temperature Programmed Desorption ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Temperature Programmed

AbstractThe adsorption and reaction of titanium tetrachloride (TiC14) on W(100) was investigated using temperature programmed desorption mass spectrometry (TPRS), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and low energy electron diffraction (LEED). TiC14 adsorbs molecularly on W(100) at 100 K. Desorption from the molecularly bound state occurs near 220 K. Competing with desorption is dissociation to adsorbed TiCl3, which reacts to form gaseous TiCl4 near 450 K. TiC13 also decomposes into atomically adsorbed Ti and Cl on the surface upon heating to 700 K.

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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