Role of substrates for heteroepitaxial growth of low room‐temperature resistivity RuO2 thin films deposited by pulsed laser deposition

1996 ◽  
Vol 14 (3) ◽  
pp. 1107-1110 ◽  
Author(s):  
Q. X. Jia ◽  
X. D. Wu ◽  
G. Song ◽  
S. R. Foltyn
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Room Temperature Resistivity ◽  
Heteroepitaxial Growth ◽  
Temperature Resistivity

Room-Temperature Heteroepitaxial Growth of NiO Thin Films using Pulsed Laser Deposition

2000 ◽  
Vol 39 (Part 1, No. 4A) ◽  
pp. 1817-1820 ◽  
Author(s):  
Minoru Tachiki ◽  
Takeshi Hosomi ◽  
Takeshi Kobayashi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Room-temperature ferromagnetism in (Ga, Mn)N thin films grown by pulsed laser deposition

2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Pulsed Laser ◽  
Laser Deposition

Role of vanadium content in ZnO thin films grown by pulsed laser deposition

2007 ◽  
Vol 254 (4) ◽  
pp. 1228-1231 ◽  
Author(s):  
M.E. Koleva ◽  
P.A. Atanasov ◽  
N.N. Nedialkov ◽  
H. Fukuoka ◽  
M. Obara
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Vanadium Content ◽  
Laser Deposition ◽  
Zno Thin Films

Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition

2003 ◽  
Vol 94 (1) ◽  
pp. 594-597 ◽  
Author(s):  
L. Yan ◽  
L. B. Kong ◽  
J. S. Pan ◽  
C. K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition

Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films
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