Focused ion beam secondary ion mass spectrometry: Ion images and end-point detection

1989 ◽  
Vol 7 (2) ◽  
pp. 181 ◽  
Author(s):  
L. R. Harriott
Keyword(s):  
Mass Spectrometry ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
End Point ◽  
Ion Mass Spectrometry ◽  
End Point Detection ◽  
Point Detection ◽  
Secondary Ion

Focused Ion Beam Sims for Micromachining Applications

1987 ◽  
Vol 101 ◽  
Author(s):  
L. R. Harriott ◽  
M. J. Vasile
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Yield ◽  
Ion Milling ◽  
End Point ◽  
Glass Interface ◽  
End Point Detection ◽  
Point Detection ◽  
Secondary Ion

ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.

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