Focused Ion Beam Sims for Micromachining Applications

1987 ◽  
Vol 101 ◽  
Author(s):  
L. R. Harriott ◽  
M. J. Vasile
Keyword(s):  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
High Yield ◽  
Ion Milling ◽  
End Point ◽  
Glass Interface ◽  
End Point Detection ◽  
Point Detection ◽  
Secondary Ion

ABSTRACTA secondary ion mass spectrometry (SIMS) system has been incorporated into the AT&T-BL second generation focused ion beam (FIB) micromachining system. The primary applications are end-point detection and topographical element mapping. End-point detection of Cr micromachining on photomasks was done with raster sizes ranging from 10 μm x 10 μm to 3 μm x 3 μm. SIMS end-points, total ions images, and transmitted light measurements show that the ion-milling can be controlled to stop prior to or after the Cr/glass interface. Mass selected secondary ion images have been obtained for high yield ions such as52Cr+ and27 A1+ on raster fields of 25 μm in time intervals ranging from 20 to 100 sec. Al+ SIMS images of 1 μm lines and spaces from a VLSI test pattern have been obtained.

Automated End-Point Detection and Targeted Ar+ Milling of Advanced Integrated Circuit FIB TEM Specimens

2017 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
J.T. Harbaugh ◽  
M. Boccabella ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
End Point Detection ◽  
Point Detection ◽  
Argon Ion

Abstract The sub-nanometer resolution that transmission electron microscopy (TEM) provides is critical to the development and fabrication of advanced integrated circuits. TEM specimens are usually prepared using the focused ion beam, which can cause gallium-induced artifacts and amorphization. This work presents the use of a concentrated argon ion beam for reproducible TEM specimen preparation using automatic milling termination and targeted ion milling of device features; the result is high-quality and electron-transparent specimens of less than 30 nm. Such work is relevant for semiconductor product development and failure analysis.

Second Order Effect Monitoring During Backside Milling for Functional End Point Detection

2019 ◽  
Author(s):  
Anthony George ◽  
Isaac Goldthwaite ◽  
Katie Liszewski ◽  
Jeremiah Schley ◽  
Thomas Kent
Keyword(s):  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Second Order ◽  
Order Effects ◽  
Back Side ◽  
End Point ◽  
End Point Detection ◽  
Second Order Effects ◽  
Point Detection

Abstract Backside silicon removal provides an avenue for a number of modern non-destructive and circuit edit techniques. Visible light microscopy, electron beam microscopy, and focused ion beam circuit edit benefit from a removal of back side silicon from the integrated circuit being examined. Backside milling provides a potential path for rapid sample preparation when thinned or ultrathinned samples are required. However, backside milling is an inherently destructive process and can damage the device function, rendering it no longer useful for further nondestructive analysis. Recent methods of backside milling do not guarantee device functionality at a detected end point without a priori knowledge. This work presents a methodology for functional end point detection during backside milling of integrated circuit packaging. This is achieved by monitoring second order effects in response to applied device strain, which guide the milling procedure, avoiding destructive force as the backside material is removed. Experimental data suggest a correlation between device power consumption waveforms and second order effects which inform an in situ functional end point. Keywords: functional end point, side-channel analysis, backside thinning, milling, machine learning, second order effects

Electrical end-point detection during ion beam etching of thin films and multilayers

1995 ◽  
Vol 8 (8) ◽  
pp. 676-679 ◽  
Author(s):  
A Matthes ◽  
F Schmidl ◽  
K -U Barholz ◽  
F Elschner ◽  
H Schneidewind ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

scholarly journals Life-cycling and uncovering cation-trapping evidence of a monolithic inorganic electrochromic device: glass/ITO/WO3/LiTaO3/NiO/ITO

Nanoscale ◽  
2018 ◽  
Vol 10 (35) ◽  
pp. 16521-16530 ◽  
Author(s):  
Dongmei Dong ◽  
Wenwen Wang ◽  
Aline Rougier ◽  
Guobo Dong ◽  
Mathias Da Rocha ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Focused Ion Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beam ◽  
Optical Emission ◽  
Electrochromic Device ◽  
Combined Approach ◽  
Lithium Transport ◽  
Secondary Ion

The visualization of the microstructure change and of the depth of lithium transport inside a monolithic ElectroChromic Device (ECD) is realized using an innovative combined approach of Focused Ion Beam (FIB), Secondary Ion Mass Spectrometry (SIMS) and Glow Discharge Optical Emission Spectroscopy (GDOES).

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