Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

1992 ◽  
Vol 10 (4) ◽  
pp. 1499 ◽  
Author(s):  
S. M. Johnson
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties ◽  
Long Wavelength ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching

2002 ◽  
Author(s):  
Tam T. Nguyen ◽  
John M. Dell ◽  
Charles A. Musca ◽  
Jarek Antoszewski ◽  
Lorenzo Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Long Wavelength ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications

2002 ◽  
Vol 80 (18) ◽  
pp. 3262-3264 ◽  
Author(s):  
Y. Wei ◽  
A. Gin ◽  
M. Razeghi ◽  
G. J. Brown
Keyword(s):  
Long Wavelength ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

Long-wavelength infrared InAs/InGaSb type-II superlattice photovoltaic detectors

2001 ◽  
Author(s):  
K. Alex Anselm ◽  
Hongwen Ren ◽  
Mauro Vilela ◽  
Jun Zheng ◽  
C.H. T. Lin ◽  
...  
Keyword(s):  
Type Ii ◽  
Long Wavelength ◽  
Type Ii Superlattice ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range

2000 ◽  
Author(s):  
Hooman Mohseni ◽  
Joseph S. Wojkowski ◽  
Abbes Tahraoui ◽  
Manijeh Razeghi ◽  
Gail J. Brown ◽  
...  
Keyword(s):  
Infrared Range ◽  
Type Ii ◽  
Long Wavelength ◽  
Photovoltaic Detectors ◽  
Long Wavelength Infrared

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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