photovoltaic detector
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scholarly journals Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe 4 nanoribbon

InfoMat ◽  
2021 ◽  
Author(s):  
Ruixue Bai ◽  
Tao Xiong ◽  
Jinshu Zhou ◽  
Yue‐Yang Liu ◽  
Wanfu Shen ◽  
...  
Keyword(s):  
Wide Spectrum ◽  
Photovoltaic Detector

Amorphous (LuGa)2O3 Film for Deep-Ultraviolet Photovoltaic Detector

2021 ◽  
pp. 129980
Author(s):  
Junqing Wu ◽  
Lemin Jia ◽  
Cunhua Xu ◽  
Zhuogeng Lin ◽  
Yuqiang Li ◽  
...  
Keyword(s):  
Deep Ultraviolet ◽  
Photovoltaic Detector

Reinforcement of Double Built-In Electric Fields in Spiro-MeOTAD/Ga2O3/Si p-i-n Structure for High Sensitivity Solar-blind UV Photovoltaic Detector

2021 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Jianying Yue ◽  
Xueqiang Ji ◽  
Zeng Liu ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Sensitivity ◽  
Uv Photodetector ◽  
Ga2o3 Film ◽  
Solar Blind ◽  
Self Powered ◽  
P Type ◽  
Photovoltaic Detector

Novel p-i-n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD (spiro), Ga2O3, and n-type Si is fabricated. The p-type spiro film is spin-coated on the surface of Ga2O3 film deposited...

scholarly journals Influence of Different Passivation Films on the Performance of InSb Photovoltaic Detector

2020 ◽  
Vol 42 (10) ◽  
pp. 953-957
Author(s):  
晓霞 龚 ◽  
瑞宇 杨 ◽  
婷婷 肖 ◽  
宇鹏 赵 ◽  
冬琼 陈 ◽  
...  
Keyword(s):  
Photovoltaic Detector

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Photovoltaic Detector

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

scholarly journals Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

2020 ◽  
Author(s):  
Yiqun Zhao ◽  
Libin Tang ◽  
Shengyi Yang ◽  
Shu Ping Lau ◽  
Kar Seng Teng
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Performance ◽  
Room Temperature ◽  
Light Irradiation ◽  
Electrical And Optical Properties ◽  
Photovoltaic Detectors ◽  
Narrow Bandgap ◽  
Photovoltaic Detector

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8×10 11 Jones at 850 nm light irradiation at room temperature was demonstrated.

Ultrawide Band Gap Oxide Nanodots (Eg > 4.8 eV) for a High-Performance Deep Ultraviolet Photovoltaic Detector

2020 ◽  
Vol 12 (5) ◽  
pp. 6030-6036 ◽  
Author(s):  
Hao Kan ◽  
Wei Zheng ◽  
Chen Fu ◽  
Richeng Lin ◽  
Jingting Luo ◽  
...  
Keyword(s):  
Band Gap ◽  
High Performance ◽  
Deep Ultraviolet ◽  
Photovoltaic Detector

In-plane enhanced epitaxy for step-flow AlN yielding a high-performance vacuum-ultraviolet photovoltaic detector

CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 654-659 ◽  
Author(s):  
Titao Li ◽  
Fei Wang ◽  
Richeng Lin ◽  
Wentao Xie ◽  
Yuqiang Li ◽  
...  
Keyword(s):  
High Performance ◽  
Vacuum Ultraviolet ◽  
High Quality ◽  
Step Flow ◽  
Photovoltaic Detector

In-plane enhanced epitaxy provides reference for the preparation of high-quality AlN and development of VUV photodetectors..

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