Ultra-shallow depth profiling with time-of-flight secondary ion mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587143 ◽

1994 ◽

Vol 12 (1) ◽

pp. 214 ◽

Author(s):

J. Bennett

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Shallow Depth ◽

Ion Mass Spectrometry ◽

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Are cluster ion analysis beams good choices for hydrogen depth profiling using time-of-flight secondary ion mass spectrometry?

Surface and Interface Analysis ◽

10.1002/sia.3776 ◽

2011 ◽

Vol 44 (1) ◽

pp. 89-93 ◽

Author(s):

Zihua Zhu ◽

Vaithiyalingam Shutthanandan

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Ion Mass Spectrometry ◽

Cluster Ion ◽

Secondary Ion ◽

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Ultra Shallow Depth Profiling by Secondary Ion Mass Spectrometry Techniques

10.1063/1.1622547 ◽

2003 ◽

Author(s):

M. Anderle

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Shallow Depth ◽

Ion Mass Spectrometry ◽

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Ultra-shallow depth profiling with secondary ion mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1622672 ◽

2004 ◽

Vol 22 (1) ◽

pp. 317 ◽

Author(s):

M. Tomita ◽

C. Hongo ◽

M. Suzuki ◽

M. Takenaka ◽

A. Murakoshi

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Shallow Depth ◽

Ion Mass Spectrometry ◽

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Time-of-flight secondary ion mass spectrometry depth profiling of multiple quantum well II–VI semiconductors using negative cluster ions

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590543 ◽

1999 ◽

Vol 17 (1) ◽

pp. 224 ◽

Author(s):

Jin Zhao ◽

Myunghee Na ◽

Patrick J. McKeown ◽

Huicheng Chang ◽

Eunhwa Lee ◽

...

Keyword(s):

Mass Spectrometry ◽

Quantum Well ◽

Secondary Ion Mass Spectrometry ◽

Multiple Quantum Well ◽

Time Of Flight ◽

Depth Profiling ◽

Cluster Ions ◽

Multiple Quantum ◽

Ion Mass Spectrometry ◽

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Evaluation of sputtering induced surface roughness development of Ni/Cu multilayers thin films by Time-of-Flight Secondary Ion Mass Spectrometry depth profiling with different energies O2+ ion bombardment

Thin Solid Films ◽

10.1016/j.tsf.2018.10.049 ◽

2019 ◽

Vol 669 ◽

pp. 188-197

Author(s):

X.L. Yan ◽

M.M. Duvenhage ◽

J.Y. Wang ◽

H.C. Swart ◽

J.J. Terblans

Keyword(s):

Mass Spectrometry ◽

Surface Roughness ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Ion Bombardment ◽

Ion Mass Spectrometry ◽

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Quantitative depth profiling of Si1–xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

Thin Solid Films ◽

10.1016/j.tsf.2016.03.049 ◽

2016 ◽

Vol 607 ◽

pp. 25-31 ◽

Author(s):

M.N. Drozdov ◽

Y.N. Drozdov ◽

A. Csik ◽

A.V. Novikov ◽

K. Vad ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Ion Mass Spectrometry ◽

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Depth Profiling of Poly(l-lactic acid)/Triblock Copolymer Blends with Time-of-Flight Secondary Ion Mass Spectrometry

Analytical Chemistry ◽

10.1021/ac048274i ◽

2005 ◽

Vol 77 (11) ◽

pp. 3570-3578 ◽

Author(s):

Christine M. Mahoney ◽

Jinxiang Yu ◽

Joseph A. Gardella

Keyword(s):

Mass Spectrometry ◽

Lactic Acid ◽

Triblock Copolymer ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Copolymer Blends ◽

Ion Mass Spectrometry ◽

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Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2004.04.180 ◽

2004 ◽

Vol 225 (3) ◽

pp. 345-352 ◽

Author(s):

M.A. Bolorizadeh ◽

S. Ruffell ◽

I.V. Mitchell ◽

R. Gwilliam

Keyword(s):

Mass Spectrometry ◽

Nuclear Reaction ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Ion Mass Spectrometry ◽

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Depth profiling cross-linked poly(methyl methacrylate) films: a time-of-flight secondary ion mass spectrometry approach

Rapid Communications in Mass Spectrometry ◽

10.1002/rcm.7801 ◽

2017 ◽

Vol 31 (4) ◽

pp. 381-388 ◽

Author(s):

Soheila Naderi-Gohar ◽

Kevin M.H. Huang ◽

Yiliang Wu ◽

Woon Ming Lau ◽

Heng-Yong Nie

Keyword(s):

Mass Spectrometry ◽

Methyl Methacrylate ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Depth Profiling ◽

Poly Methyl Methacrylate ◽

Ion Mass Spectrometry ◽

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Transient effects in ultra shallow depth profiling of silicon by secondary ion mass spectrometry

The Journal of Chemical Physics ◽

10.1063/1.1318197 ◽

2000 ◽

Vol 113 (22) ◽

pp. 10344-10352 ◽

Author(s):

P. A. W. van der Heide ◽

M. S. Lim ◽

S. S. Perry ◽

J. W. Rabalais

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Shallow Depth ◽

Transient Effects ◽

Ion Mass Spectrometry ◽

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