Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S
2004 ◽
Vol 225
(3)
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pp. 345-352
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1999 ◽
Vol 17
(1)
◽
pp. 224
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1994 ◽
Vol 12
(1)
◽
pp. 214
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2017 ◽
Vol 31
(4)
◽
pp. 381-388
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Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry
2013 ◽
Vol 39
(12)
◽
pp. 1097-1100
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