Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S

Author(s):  
M.A. Bolorizadeh ◽  
S. Ruffell ◽  
I.V. Mitchell ◽  
R. Gwilliam
2013 ◽  
Vol 39 (12) ◽  
pp. 1097-1100 ◽  
Author(s):  
M. N. Drozdov ◽  
Yu. N. Drozdov ◽  
G. L. Pakhomov ◽  
V. V. Travkin ◽  
P. A. Yunin ◽  
...  

2013 ◽  
Vol 19 (S2) ◽  
pp. 664-665
Author(s):  
P.A. Clark ◽  
E. Tallarek ◽  
D. Breitenstein ◽  
B. Hagenhoff ◽  
N. Havercroft

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


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