Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications
1999 ◽
Vol 17
(6)
◽
pp. 2596
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1985 ◽
Vol 6
(10)
◽
pp. 531-533
◽
2004 ◽
Vol 43
(4B)
◽
pp. 2255-2258
◽
2011 ◽
1997 ◽
Vol 15
(1)
◽
pp. 49
◽
1999 ◽