Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate
2004 ◽
Vol 43
(4B)
◽
pp. 2255-2258
◽
2011 ◽
1999 ◽
Vol 17
(6)
◽
pp. 2596
◽
1997 ◽
Vol 15
(1)
◽
pp. 49
◽
1998 ◽
Vol 37
(Part 1, No. 3B)
◽
pp. 1365-1372
◽