Electrical features in $$\hbox {AlGaN}/\hbox {GaN}$$ AlGaN / GaN high electron mobility transistors with recessed gate and undoped region in the barrier

Pramana ◽  
2019 ◽  
Vol 92 (4) ◽  
Author(s):  
S M Razavi ◽  
S H Zahiri ◽  
S Karimi
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Recessed Gate

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

2004 ◽  
Vol 43 (4B) ◽  
pp. 2255-2258 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keiji Ikeda ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Rf Performance ◽  
Recessed Gate

AlGaAs/InGaAs High-Electron Mobility Transistors Fabricated Using Silicon Nitride Passivation and Selective-Etching Process

2021 ◽  
Vol 13 (4) ◽  
pp. 638-641
Author(s):  
Yu-Shyan Lin ◽  
Chun-Cheng Lin
Keyword(s):  
Silicon Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Current Gain ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Characteristics ◽  
Electron Mobility Transistors ◽  
Selective Etch ◽  
Recessed Gate

AlGaAs/InGaAs high-electron mobility transistors (HEMTs) are grown by molecular beam epitaxy (MBE). The studied HEMTs use two AlAs layers as etch-stop layers in the selective-etch recessed-gate fabrication of the HEMTs. The influence of passivation using silicon nitride on HEMTs is examined. Passivation improves the dc, high-frequency, and power characteristics of AlGaAs/InGaAs HEMTs. The passivated HEMT has a maximum extrinsic transconductance of 207 mS/mm, a unity-current-gain frequency (fT) of 13 GHz, and a maximum oscillation frequency (fmax) of 26 GHz. Furthermore, the variation of dc characteristics of the passivated HEMT with temperature is reduced.

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