Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

2006 ◽  
Vol 45 (4B) ◽  
pp. 3358-3363
Author(s):  
Jong-Won Lim ◽  
Ho-Kyun Ahn ◽  
Hong-Gu Ji ◽  
Woo-Jin Chang ◽  
Jae-Kyoung Mun ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Recessed Gate ◽  
Microwave Characteristics

scholarly journals Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125231
Author(s):  
Ajay Kumar Visvkarma ◽  
Chandan Sharma ◽  
Robert Laishram ◽  
Sonalee Kapoor ◽  
D. S. Rawal ◽  
...  
Keyword(s):  
Comparative Study ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

2004 ◽  
Vol 43 (4B) ◽  
pp. 2255-2258 ◽  
Author(s):  
Akira Endoh ◽  
Yoshimi Yamashita ◽  
Keiji Ikeda ◽  
Masataka Higashiwaki ◽  
Kohki Hikosaka ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Rf Performance ◽  
Recessed Gate
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