scholarly journals Photoacoustic imaging depth comparison at 532-, 800-, and 1064-nm wavelengths: Monte Carlo simulation and experimental validation

2019 ◽  
Vol 24 (12) ◽  
pp. 1 ◽  
Author(s):  
Arunima Sharma ◽  
Srishti ◽  
Vijitha Periyasamy ◽  
Manojit Pramanik
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Experimental Validation ◽  
Photoacoustic Imaging ◽  
Imaging Depth

scholarly journals Development and Validation of a Calibration Gauge for Length Measurement Systems

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3960 ◽  
Author(s):  
Francisco Javier Brosed ◽  
Raquel Acero Cacho ◽  
Sergio Aguado ◽  
Marta Herrer ◽  
Juan José Aguilar ◽  
...  
Keyword(s):  
Finite Element Analysis ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Machine Tools ◽  
Experimental Validation ◽  
Element Analysis ◽  
Measurement Systems ◽  
Guidance Systems ◽  
Verification Systems ◽  
Development And Validation

Due to accuracy requirements, robots and machine-tools need to be periodically verified and calibrated through associated verification systems that sometimes use extensible guidance systems. This work presents the development of a reference artefact to evaluate the performance characteristics of different extensible precision guidance systems applicable to robot and machine tool verification. To this end, we present the design, modeling, manufacture and experimental validation of a reference artefact to evaluate the behavior of these extensible guidance systems. The system should be compatible with customized designed guides, as well as with commercial and existing telescopic guidance systems. Different design proposals are evaluated with finite element analysis, and two final prototypes are experimentally tested assuring that the design performs the expected function. An estimation of the uncertainty of the reference artefact is evaluated with a Monte Carlo simulation.

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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