Microelectromechanical systems–based visible-near infrared Fabry-Perot tunable filters using quartz substrate

2012 ◽  
Vol 51 (7) ◽  
pp. 074007 ◽  
Author(s):  
Neelam Gupta
Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 164
Author(s):  
Hartmut Hillmer ◽  
Carsten Woidt ◽  
André Istock ◽  
Aliaksei Kobylinskiy ◽  
Duc Toan Nguyen ◽  
...  

Optical spectrometers and sensors have gained enormous importance in metrology and information technology, frequently involving the question of size, resolution, sensitivity, spectral range, efficiency, reliability, and cost. Nanomaterials and nanotechnological fabrication technologies have huge potential to enable an optimization between these demands, which in some cases are counteracting each other. This paper focuses on the visible and near infrared spectral range and on five types of optical sensors (optical spectrometers): classical grating-based miniaturized spectrometers, arrayed waveguide grating devices, static Fabry–Pérot (FP) filter arrays on sensor arrays, tunable microelectromechanical systems (MEMS) FP filter arrays, and MEMS tunable photonic crystal filters. The comparison between this selection of concepts concentrates on (i) linewidth and resolution, (ii) required space for a selected spectral range, (iii) efficiency in using available light, and (iv) potential of nanoimprint for cost reduction and yield increase. The main part of this review deals with our own results in the field of static FP filter arrays and MEMS tunable FP filter arrays. In addition, technology for efficiency boosting to get more of the available light is demonstrated.


Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 114
Author(s):  
Steve Kamau ◽  
Safaa Hassan ◽  
Khadijah Alnasser ◽  
Hualiang Zhang ◽  
Jingbiao Cui ◽  
...  

It is challenging to realize the complete broadband absorption of near-infrared in thin optical devices. In this paper, we studied high light absorption in two devices: a stack of Au-pattern/insulator/Au-film and a stack of Au-pattern/weakly-absorbing-material/Au-film where the Au-pattern was structured in graded photonic super-crystal. We observed multiple-band absorption, including one near 1500 nm, in a stack of Au-pattern/spacer/Au-film. The multiple-band absorption is due to the gap surface plasmon polariton when the spacer thickness is less than 30 nm. Broadband absorption appears in the near-infrared when the insulator spacer is replaced by a weakly absorbing material. E-field intensity was simulated and confirmed the formation of gap surface plasmon polaritons and their coupling with Fabry–Pérot resonance.


2021 ◽  
Vol 60 (11) ◽  
Author(s):  
Yu Wang ◽  
Yumin Liu ◽  
Tiesheng Wu ◽  
Jing Li ◽  
Yuhang Sun ◽  
...  

2008 ◽  
Vol 80 (9) ◽  
pp. 3175-3181 ◽  
Author(s):  
Claudete Fernandes Pereira ◽  
Fabiano Barbieri Gonzaga ◽  
Celio Pasquini

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 708
Author(s):  
Maurizio Casalino

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.


Icarus ◽  
1974 ◽  
Vol 23 (4) ◽  
pp. 568-576 ◽  
Author(s):  
C. Barbieri ◽  
C.B. Cosmovici ◽  
K.W. Michel ◽  
T. Nishimura ◽  
A.E. Roche

1985 ◽  
Vol 97 ◽  
pp. 1020 ◽  
Author(s):  
M. Tanaka ◽  
T. Yamashita ◽  
S. Sato ◽  
H. Okuda

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