Recent progress in atomic layer epitaxy

1993 ◽  
Author(s):  
S. M. Bedair
Keyword(s):  
Recent Progress ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Recent Progress in Atomic Layer Epitaxy of III–V Compounds

1991 ◽  
Vol 222 ◽  
Author(s):  
S. M. Bedair
Keyword(s):  
Quantum Wells ◽  
Recent Progress ◽  
Atomic Layer ◽  
Reactor Design ◽  
Ternary Alloys ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy ◽  
Ordered Alloys ◽  
Potential Applications

ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

Recent progress in atomic layer epitaxy of III–V compounds

1988 ◽  
Vol 93 (1-4) ◽  
pp. 182-189 ◽  
Author(s):  
S.M. Bedair ◽  
B.T. McDermott ◽  
Y. Ide ◽  
N.H. Karam ◽  
H. Hashemi ◽  
...  
Keyword(s):  
Recent Progress ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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