Recent Progress in Atomic Layer Epitaxy of III–V Compounds

1991 ◽  
Vol 222 ◽  
Author(s):  
S. M. Bedair
Keyword(s):  
Quantum Wells ◽  
Recent Progress ◽  
Atomic Layer ◽  
Reactor Design ◽  
Ternary Alloys ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy ◽  
Ordered Alloys ◽  
Potential Applications

ABSTRACTThe potential applications of Atomic Layer Epitaxy of III–V compounds will be outlined. These include the growth of special structures and devices such as ordered alloys, ultra-thin quantum wells, non-alloyed contacts, planar doped FET's and HBT's. Also, the main challenges facing ALE will be outlined along with possible solutions. These include reactor design, control of carbon doping and the growth of ternary alloys. A general assessment of the ALE technology will be provided.

scholarly journals Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

2017 ◽  
Vol 15 (19) ◽  
pp. 337
Author(s):  
Juan Carlos Salcedo Reyes
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Sobre Todo

El pasado 7 de octubre de 2014 se anunció, por parte del correspondiente comité, que el premio Nobel de Física 2014 se les concedió a los japoneses Isamu Akasaki, Hiroshi Amano y Shuji Nakamura por la invención de los diodos emisores de luz (LED, por sus siglas en inglés) con emisión en la región verde-azul del espectro visible (Nakamura, Mukai & Senoh, 1991). La importancia de este invento está relacionada tanto con las potenciales aplicaciones de los LED azules como fuente de luz eficiente y ecológica, como en el desarrollo de los llamados sistemas cuánticos. Es así como actualmente el desarrollo de dispositivos electrónicos y opto-electrónicos, cuya región activa está constituida por estructuras cuánticas, está fuertemente modulado por la capacidad de fabricar dichas estructuras con una alta calidad cristalina, un alto control de la composición química y, sobre todo, con gran reproducibilidad. En este sentido, las técnicas de crecimiento epitaxial constituyen la piedra angular en el desarrollo tecnológico que supone la nano-electrónica. En este trabajo se plantean, en general, los diferentes procesos químicos y físicos que tienen lugar durante un crecimiento por Epitaxia de Capas Atómicas (Atomic Layer Epitaxy, ALE) de pozos cuánticos ultra-delgados (Ultra-Thin Quantum Wells, UTQW) de ZnXCd1-X.Se y se estudian, en particular, la cinética del proceso de adsorción de Zn dentro de la estructura cristalina en términos de una ecuación de reacción de primer orden que define la composición de la estructura en función de la temperatura del sustrato (Ts) y del flujo de átomos de zinc. Se obtienen los valores para la energía de activación, el factor pre-exponencial y la constante de adsorción de Zn. La composición química de los UTQW es uno de los parámetros más importantes para el diseño de estructuras cuánticas, ya que define la energía de emisión en potenciales aplicaciones opto-electrónicas y, en particular, en el desarrollo de LED azules y UV.

Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy

2019 ◽  
Vol 53 (16) ◽  
pp. 2060-2063 ◽  
Author(s):  
V. Agekyan ◽  
M. Chukeev ◽  
G. Karczewski ◽  
A. Serov ◽  
N. Filosofov ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Double Quantum

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 1559-1562
Author(s):  
Jörg Pezoldt ◽  
Thomas Kups ◽  
Petia Weih ◽  
Thomas Stauden ◽  
Oliver Ambacher
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Ternary Alloys ◽  
Energy Dispersive ◽  
Atomic Layer Epitaxy ◽  
X Ray ◽  
Edx Analysis

3C-(Si1-xC1-y)Gex+y ternary alloys were grown on 8.5° off axis 4H-SiC substrates by solid source molecular beam epitaxy in a temperature range between 750°C and 950°C. Energy dispersive X-ray (EDX) analysis revealed a decrease of the Ge incorporation versus substrate temperature. This effect is due to the fixed Si/Ge ratio during the epitaxial growth. The Ge distribution within the grown epitaxial layers was found to be nearly homogeneous. The investigations by atomic location by channeling enhanced microanalysis allowed the conclusion that Ge is located mainly at Si lattice sites.

Carbon doping of III-V compounds by atomic-layer epitaxy

1992 ◽  
Author(s):  
Kimberly G. Reid ◽  
A. F. Myers ◽  
J. Ramdani ◽  
N. A. El-Masry ◽  
Salah M. Bedair
Keyword(s):  
Atomic Layer ◽  
Carbon Doping ◽  
Atomic Layer Epitaxy

scholarly journals Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

2016 ◽  
Vol 120 (22) ◽  
pp. 225303 ◽  
Author(s):  
Akihiko Yoshikawa ◽  
Kazuhide Kusakabe ◽  
Naoki Hashimoto ◽  
Eun-Sook Hwang ◽  
Daichi Imai ◽  
...  
Keyword(s):  
Fine Structure ◽  
Quantum Wells ◽  
Systematic Study ◽  
Growth Temperature ◽  
High Growth ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Growth Temperature

Atomic Layer Epitaxy

1990 ◽  
Vol 198 ◽  
Author(s):  
Akira Usui
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Cycle Growth ◽  
High Uniformity ◽  
Recent Developments ◽  
Potential Applications ◽  
Fine Structures ◽  
Order Structures

ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.

OPTICAL PROPERTIES OF CdTe/ZnTe ULTRATHIN QUANTUM WELLS GROWN BY ATOMIC LAYER EPITAXY

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1667-1670 ◽  
Author(s):  
M. GARCÍA-ROCHA ◽  
I. HERNÁNDEZ-CALDERÓN
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Quantum Wells ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Diffusion Length ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Low Temperature Photoluminescence

Ultrathin quantum wells (UTQWs) of CdTe within ZnTe barriers were successfully grown by atomic layer epitaxy (ALE) on GaAs(001) substrates. ALE growth of CdTe was performed by alternate exposure of the substrate surface to individual fluxes of Cd and Te. Two different samples with 2-monolayer (ML) (substrate temperature Ts= 270° C ) and 4 ML (Ts = 290° C ) CdTe QWs were grown. Low temperature photoluminescence (PL) experiments exhibited intense and sharp peaks associated to the 2 ML QWs at 2.26 eV. In the case of the nominally 4-ML-thick QW the PL spectrum presented an intense peak around 2.13 eV and two weak features around 2.04 and 1.91 eV. The first peak is attributed to ~ 3 ML QW and the second one to ~ 4 ML QW. The dominance of the 3 ML peak is mainly attributed to Cd loss in the QW due to its substitution by Zn atoms. Due to a high diffusion length of the photogenerated carriers in the barriers, quite weak signals from the ZnTe barriers were observed in both cases. Room temperature (RT) photoreflectance (PR) spectra showed contributions from the CdTe UTQWs, the ZnTe barriers, and the GaAs substrate.

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