Comparison of ECR plasma pretreatment techniques for ZnO atomic layer epitaxy on the sapphire substrate

2004 ◽  
Vol 1 (10) ◽  
pp. 2545-2549 ◽  
Author(s):  
Kyoungchul Shin ◽  
Chongmu Lee
Keyword(s):  
Sapphire Substrate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Ecr Plasma ◽  
Plasma Pretreatment

Atomic layer epitaxy of ZnO and TiO 2 thin films on c-plane sapphire substrate for novel oxide soft x-ray mirrors

2010 ◽  
Author(s):  
Masaki Murata ◽  
Yuji Tanaka ◽  
Hiroshi Kumagai ◽  
Tsutomu Shinagawa ◽  
Ataru Kobayashi
Keyword(s):  
Thin Films ◽  
Sapphire Substrate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray

Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

CrystEngComm ◽  
2020 ◽  
Vol 22 (19) ◽  
pp. 3309-3321 ◽  
Author(s):  
Mohd Nazri Abd Rahman ◽  
Yusnizam Yusuf ◽  
Afiq Anuar ◽  
Mohamad Raqif Mahat ◽  
Narong Chanlek ◽  
...  
Keyword(s):  
Free Surface ◽  
Sapphire Substrate ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Metalorganic Chemical Vapour Deposition ◽  
Pulsed Atomic Layer Epitaxy ◽  
Atomically Flat ◽  
Metalorganic Chemical

An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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