Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

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Investigation of nucleation and growth processes of diamond films by atomic force microscopy

Journal of Applied Physics ◽

10.1063/1.358496 ◽

1994 ◽

Vol 76 (7) ◽

pp. 4099-4106 ◽

Cited By ~ 21

Author(s):

M. A. George ◽

A. Burger ◽

W. E. Collins ◽

J. L. Davidson ◽

A. V. Barnes ◽

...

Keyword(s):

Atomic Force Microscopy ◽

Diamond Films ◽

Nucleation And Growth ◽

Growth Processes ◽

Force Microscopy ◽

Atomic Force

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Growth processes of poly methylmethacrylate particles investigated by atomic force microscopy

Advanced Powder Technology ◽

10.1163/156855207782146553 ◽

2007 ◽

Vol 18 (5) ◽

pp. 567-577 ◽

Cited By ~ 11

Author(s):

Tetsuya Yamamoto ◽

Ko Higashitani

Keyword(s):

Atomic Force Microscopy ◽

Growth Processes ◽

Force Microscopy ◽

Atomic Force

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Kinetic of Growth Processes of PbTe:Bi Nanocrystalline Structures on Mica-Muscovite Cleavages Substrate

Фізика і хімія твердого тіла ◽

10.15330/pcss.16.2.293-296 ◽

2015 ◽

Vol 16 (2) ◽

pp. 293-296

Author(s):

Ya.P. Saliy ◽

O.I. Nalyvaychuk ◽

M.V. Reykalo

Keyword(s):

Atomic Force Microscopy ◽

Crystal Growth ◽

Epitaxial Films ◽

Surface Topology ◽

Growth Processes ◽

Force Microscopy ◽

Atomic Force ◽

Nanocrystalline Structures ◽

Wall Method

The results of investigation of formation plumbum telluride epitaxial films by atomic force microscopy are presented. The surface topology of PbTe films grown by hot wall method on micas-muscovite fresh cleavages substrates for 350 - 630 K condensation temperatures range and thickness up to 10 μm are given. This indicated the presence of the vapour - crystal growth processes of a films without a coalescence.

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Atomic and Close-to-Atomic Scale Manufacturing: A Review on Atomic Layer Removal Methods Using Atomic Force Microscopy

Nanomanufacturing and Metrology ◽

10.1007/s41871-020-00067-2 ◽

2020 ◽

Vol 3 (3) ◽

pp. 167-186 ◽

Cited By ~ 4

Author(s):

Paven Thomas Mathew ◽

Brian J. Rodriguez ◽

Fengzhou Fang

Keyword(s):

Atomic Force Microscopy ◽

Semiconductor Industry ◽

Atomic Layer ◽

Atomic Scale ◽

Small Scale ◽

Electronic Components ◽

Force Microscopy ◽

Layer Removal ◽

Atomic Force ◽

Mechanical Methods

Abstract Manufacturing at the atomic scale is the next generation of the industrial revolution. Atomic and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force microscopy (AFM) is a promising method for this purpose since an instrument to machine at this small scale has not yet been developed. As the need for increasing the number of electronic components inside an integrated circuit chip is emerging in the present-day scenario, methods should be adopted to reduce the size of connections inside the chip. This can be achieved using molecules. However, connecting molecules with the electrodes and then to the external world is challenging. Foundations must be laid to make this possible for the future. Atomic layer removal, down to one atom, can be employed for this purpose. Presently, theoretical works are being performed extensively to study the interactions happening at the molecule–electrode junction, and how electronic transport is affected by the functionality and robustness of the system. These theoretical studies can be verified experimentally only if nano electrodes are fabricated. Silicon is widely used in the semiconductor industry to fabricate electronic components. Likewise, carbon-based materials such as highly oriented pyrolytic graphite, gold, and silicon carbide find applications in the electronic device manufacturing sector. Hence, ACSM of these materials should be developed intensively. This paper presents a review on the state-of-the-art research performed on material removal at the atomic scale by electrochemical and mechanical methods of the mentioned materials using AFM and provides a roadmap to achieve effective mass production of these devices.

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