780-nm high-power laser diode fabricated by metal organic chemical vapor deposition technique

Author(s):  
Yoichiro Ohta ◽  
Tetsuya Yagi ◽  
Hitoshi Kagawa ◽  
Hideyo Higuchi ◽  
Kuniki Tamari ◽  
...  
2007 ◽  
Vol 336-338 ◽  
pp. 760-762
Author(s):  
Hyoun Woo Kim ◽  
Ju Hyun Myung

Indium oxide (In2O3) films was deposited on TiN substrates by the metal organic chemical vapor deposition technique using a triethylindium and oxygen mixture. The films deposited at 250-350°C were polycrystalline, while that deposited at 200°C was close to amorphous. XRD and SEM analyses indicated that the films grown at 350°C had grained structures with the (222) preferred orientation.


RSC Advances ◽  
2017 ◽  
Vol 7 (48) ◽  
pp. 30295-30302 ◽  
Author(s):  
Zaki S. Khalifa

TiO2 thin films have been deposited at 300 °C on quartz substrates by a metal–organic chemical vapor deposition technique.


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